2021
DOI: 10.1002/aisy.202000206
|View full text |Cite
|
Sign up to set email alerts
|

Memory Devices for Flexible and Neuromorphic Device Applications

Abstract: Recently, consumer electronics have moved toward data-centric applications due to the development of smart electronic devices. Moreover, electronic devices have become highly portable, wearable, and lightweight. These devices require flexible data storage with high density. Furthermore, with the growing demand for larger memory capacity, faster processing speed, and complex data computation, neuromorphic devices have emerged as the nextgeneration memory technologies. To meet the needs of next-generation memory… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1

Citation Types

0
13
0

Year Published

2021
2021
2024
2024

Publication Types

Select...
8

Relationship

2
6

Authors

Journals

citations
Cited by 14 publications
(13 citation statements)
references
References 201 publications
(379 reference statements)
0
13
0
Order By: Relevance
“…[26] In addition, many researchers have focused on doping engineering, interfacial stress, oxygen vacancies, and surface energy to enhance the ferroelectric properties of HfO 2 films. [27,28] Figure 1 shows the effect of HfO 2 crystal structure on the ferroelectricity, the device structure of the HfO 2 as well as the device application.In this paper, the effect of HfO 2 crystal structure on the device electrical properties will be briefly introduced, and the method of HfO 2 epitaxial growth and failure mechanism of HfO 2 -based device will be summarized. At the same time, we concluded the progress of first principle calculation of the HfO 2 ferroelectric properties.…”
mentioning
confidence: 99%
“…[26] In addition, many researchers have focused on doping engineering, interfacial stress, oxygen vacancies, and surface energy to enhance the ferroelectric properties of HfO 2 films. [27,28] Figure 1 shows the effect of HfO 2 crystal structure on the ferroelectricity, the device structure of the HfO 2 as well as the device application.In this paper, the effect of HfO 2 crystal structure on the device electrical properties will be briefly introduced, and the method of HfO 2 epitaxial growth and failure mechanism of HfO 2 -based device will be summarized. At the same time, we concluded the progress of first principle calculation of the HfO 2 ferroelectric properties.…”
mentioning
confidence: 99%
“…In addition to inorganic and organic materials, 2D materials have recently received extensive attention due to their unique structural characteristics, good mechanical flexibility, and excellent electrical properties (Kim et al, 2021a;Meng et al, 2021). Plenty of 2D materials such as graphene (Sun et al, 2017), transition metal dichalcogenides (TMD) (Feng et al, 2019;Zhao et al, 2018) and boron nitride (BN) (Ge et al, 2021;Qian et al, 2017;Siddiqui et al, 2017) and fabulous thermal stability (Figure 3A) (Wang et al, 2018a).…”
Section: Flexible Two-dimensional Materials Memristive Arraysmentioning
confidence: 99%
“…[365][366][367] The synthetic synapses to detect strain, touch and pressure can be helpful to avoid injuries or damages, or for human-machine interactions and communication. [368] For example, piezoelectric nanogenerators can link spatiotemporal strain information with artificial intelligence to detect perception, [369] but require flexible data storage, with large memory capacity, fast processing speed, complex data computation, [370] and ultra-low energy consumption. [371] All these features are still far from the realization in current soft robots.…”
Section: Proprioception and Control System For Soft Robotsmentioning
confidence: 99%