Momentum-matching and band-alignment van der Waals heterostructures for high-efficiency infrared photodetection

Abstract

Two-dimensional (2D) infrared photodetectors always suffer from low quantum efficiency (QE) because of the limited atomically thin absorption. Here, we reported 2D black phosphorus (BP)/Bi 2 O 2 Se van der Waals (vdW) photodetectors with momentum-matching and band-alignment heterostructures to achieve high QE. The QE was largely improved by optimizing the generation, suppressing the recombination, and improving the collection of photocarriers. Note that momentum-matching BP/Bi 2 O 2 Se heterostructures in k -space lead to the highly efficient generation and transition of photocarriers. The recombination process can be largely suppressed by lattice mismatching–immune vdW interfaces. Furthermore, type II BP/Bi 2 O 2 Se vdW heterostructures could also assist fast transport and collection of photocarriers. By constructing momentum-matching and band-alignment heterostructures, a record-high QE of 84% at 1.3 micrometers and 76.5% at 2 micrometers have been achieved in BP/Bi 2 O 2 Se vdW photodetectors.

Type II Homo-Type Bi2O2Se Nanosheet/InSe Nanoflake Heterostructures for Self-Driven Broadband Visible–Near-Infrared Photodetectors

“…Most of the 2D materials in few-layered or multilayered structures integrated with Bi 2 O 2 Se always feature an indirect bandgap, suffering from relatively weak light–matter interaction. Although BP is a direct bandgap 2D material that is independent of the number of layers and the vdWs heterojunctions based on Bi 2 O 2 Se/BP possess high photodetection performance, , the intrinsic instability of BP hinders its wide application. , Additionally, monolayer 2D materials such as WS 2 and MoS 2 with direct bandgap show a relatively low light absorption coefficient and low responsivity. The multilayered β-InSe nanoflake (>6 nm) with the merits of tunable electronic properties, broadband photoresponse, and a high light absorption coefficient has a direct bandgap ∼1.25 eV.…”

“…Meanwhile, Zhai et al reported a p-WSe 2 /n-Bi 2 O 2 Se vdWs heterojunction photodiode, achieving an ultrahigh rectification ratio of 10 5 attributed to a large band offset. 38 Although BP is a direct bandgap 2D material that is independent of the number of layers and the vdWs heterojunctions based on Bi 2 O 2 Se/BP possess high photodetection performance, 34,44 the intrinsic instability of BP hinders its wide application. 45,46 Additionally, monolayer 2D materials such as WS 2 and MoS 2 with direct bandgap show a relatively low light absorption coefficient and low responsivity.…”

Van der Waals Black Phosphorus/Bi10O6S9 Heterojunction Harvesting Ambient Electric Field Energy for Enhanced Photoelectrochemical Sense

“…Kwak et al proposed a BP/WS 2 vdWH, which exhibits a high current rectification and solar efficiency because the vdWH may generate a few trap sites in the interface between WS 2 and BP . Chen et al fabricated a 2D BP/Bi 2 O 2 Se vdWH, which can exhibit a high quantum efficiency due to the formed momentum-matching vdWH . The momentum-matching vdWH can support interlayer transitions that are direct in the k-space irrespective of direct or indirect band gap semiconductors.…”

“…27 Chen et al fabricated a 2D BP/Bi 2 O 2 Se vdWH, which can exhibit a high quantum efficiency due to the formed momentum-matching vdWH. 34 The momentum-matching vdWH can support interlayer transitions that are direct in the k-space irrespective of direct or indirect band gap semiconductors. The momentum-matching vdWH can not only improve the generation rate of photocarriers but also reduce the carrier interface recombination with low latticemismatching scattering and defect-free impurities.…”

Precisely Tailoring a FAPbI3-Derived Ferroelectric for Sensitive Self-Driven Broad-Spectrum Polarized Photodetection

“…However, the devices mentioned above are limited by the anisotropic absorption of the materials’ internal structure, and required an external electric bias as a driving force to separate the photogenerated carriers. Self-powered photodetectors such as p–n junctions and Schottky barriers are gaining traction for sustainability and energy saving, , with recent studies of self-powered BP/Bi 2 O 2 Se, CNT/Si, and graphene/Si photodetectors demonstrating satisfactory performance. Nonetheless, these detectors suffer from relatively complex fabrication and interface engineering.…”