Temperature dependence of the power gain and scattering parametersS11 andS22 of an RF nMOSFET with advanced RF-CMOS technology

Lin, Yo‐Sheng

doi:10.1002/mop.20581

Cited by 16 publications

(12 citation statements)

References 12 publications

(26 reference statements)

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“…As illustrated in Figures 2 and 3, the kink effect can be detected also as a dip in the magnitude of S 22 , due to two zeros occurring between two poles. This is in line with findings from previous studies showing that the kink effect in S 22 can be analyzed also in terms of poles and zeros [2][3][4]6]. The shape of the kink effect strongly depends on the combined effects of equivalent circuit elements whose values might remarkably vary with the operating conditions.…”

Section: Kink Effect In S 22supporting

confidence: 90%

“…With the aim of enabling microwave engineers to exploit advanced transistor technologies at their best, increasing attention is being given to the investigation of the kink effects in the output reflection coefficient (S 22 ) and the short-circuit current-gain (h 21 ) of solid-state electronic devices made with different semiconductor materials, like silicon (Si), gallium arsenide (GaAs), and gallium nitride (GaN) [1][2][3][4][5][6][7][8][9][10][11][12][13]. The kink in S 22 consists in the change of the concavity of the function Im(S 22 ) versus Re(S 22 ) (i.e., from convex to concave and vice versa), while the kinks in h 21 consist of peaks that are detectable by plotting the magnitude of h 21 in dB versus the frequency on a log scale.…”

Section: Introductionmentioning

confidence: 99%

“…As the kink effects can be interpreted in terms of the transistor equivalent-circuit elements, many studies have been developed to identify those ones playing a dominant role, depending on the specific case study. The origin of the kink effect in S 22 has been mostly ascribed to high values of the transconductance (g m ) [1,[4][5][6], whereas h 21 can be affected by a first kink, originating from the resonance between the extrinsic inductances and the intrinsic capacitances [7][8][9]12,13], and a second kink, arising from the resonance of the extrinsic reactive elements [12,13]. It is worth underlining that an accurate study of the kink effects in S 22 and h 21 parameters of microwave transistors represents a powerful tool for microwave engineers for fabrication, modeling and design purposes.…”

Section: Introductionmentioning

confidence: 99%

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A New Study on the Temperature and Bias Dependence of the Kink Effects in S22 and h21 for the GaN HEMT Technology

et al. 2018

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The aim of this feature article is to provide a deep insight into the origin of the kink effects affecting the output reflection coefficient (S22) and the short-circuit current-gain (h21) of solid-state electronic devices. To gain a clear and comprehensive understanding of how these anomalous phenomena impact device performance, the kink effects in S22 and h21 are thoroughly analyzed over a broad range of bias and temperature conditions. The analysis is accomplished using high-frequency scattering (S-) parameters measured on a gallium-nitride (GaN) high electron-mobility transistor (HEMT). The experiments show that the kink effects might become more or less severe depending on the bias and temperature conditions. By using a GaN HEMT equivalent-circuit model, the experimental results are analyzed and interpreted in terms of the circuit elements to investigate the origin of the kink effects and their dependence on the operating condition. This empirical analysis provides valuable information, simply achievable by conventional instrumentation, that can be used not only by GaN foundries to optimize the technology processes and, as a consequence, device performance, but also by designers that need to face out with the pronounced kink effects of this amazing technology.

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Section: Kink Effect In S 22supporting

confidence: 90%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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A New Study on the Temperature and Bias Dependence of the Kink Effects in S22 and h21 for the GaN HEMT Technology

et al. 2018

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“…9, at the same gate voltage used to bias the TWA. Also shown in this figure is the evolution of the threshold voltage as a function of temperature, which drops by 20% from room temperature up to 250 C. This can be explained by the fact that exhibits a negative temperature coefficient [13].…”

Section: A Temperature Impactmentioning

confidence: 91%

Behavior of a traveling-wave amplifier versus temperature in SOI technology

Moussa

Pavageau

Simon

et al. 2006

IEEE Trans. Microwave Theory Techn.

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In this paper, the design and measurement results of a CMOS partially depleted silicon-on-insulator (SOI) traveling-wave amplifier (TWA) are presented. The four-stage TWA is designed with a single common source nMOSFET in each stage using a 130-nm SOI CMOS technology requiring a chip area of 0.75 mm 2 . A gain of 4.5 dB and a unity-gain bandwidth of 30 GHz are measured at 1.4-V supply voltage for a power consumption of 66 mW.The designed circuit has been characterized over a temperature range from 25 C to 300 C. The performance degradation on the gain of the TWA, the SOI transistors, as well as the microstrip lines used for the matching network are analyzed. Thanks to the introduction of a dynamic threshold-voltage MOSFET, a greater gain-bandwidth product under lower bias conditions is demonstrated.Index Terms-Dynamic threshold voltage MOSFET (DTMOS), floating body (FB), high-temperature effect, microstrip lines, silicon-on-insulator (SOI), traveling-wave amplifier (TWA).

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“…High‐frequency characterization of metal–oxide–semiconductor field‐effect transistors (MOSFETs) at different temperatures is essential to CMOS circuit designs because it can provide information to achieve required circuit performance as temperature changes. Device direct‐current (DC) characteristics with respect to temperature and its influence on radio‐frequency (RF) performance at different temperatures have been investigated in the saturation region for RF applications.…”

Section: Introductionmentioning

confidence: 99%

Temperature dependence on RF avalanche breakdown of RF mosfets in the impact ionization region

Lee

Lin

2015

Micro & Optical Tech Letters

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In this article, temperature dependence on radio‐frequency (RF) avalanche effects of metal–oxide–semiconductor field‐effect transistors (MOSFETs) in the impact ionization region is investigated using RF measurements for the first time. Equivalent circuit parameters of MOSFETs including the inductive breakdown network are extracted from low to high temperatures to characterize device performance and its temperature dependency in the breakdown regime. At elevated temperatures, inductive behavior resulting from a RF avalanche mechanism becomes evident due to the pronounced inductive network with increasing temperature. When the RF avalanche mechanism is not considered, a deviation of the extracted channel resistance increases with raising temperature. The effect of inductive breakdown on output voltage standing wave ratio performance when designing an output matching network for the MOSFETs is also analyzed at different temperatures. The presented analysis of temperature dependence on device performance can be beneficial to RF power amplifier design in the breakdown region for high‐altitude applications at different temperatures. © 2015 Wiley Periodicals, Inc. Microwave Opt Technol Lett 57:817–820, 2015

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Temperature dependence of the power gain and scattering parametersS11 andS22 of an RF nMOSFET with advanced RF-CMOS technology

Cited by 16 publications

References 12 publications

A New Study on the Temperature and Bias Dependence of the Kink Effects in S22 and h21 for the GaN HEMT Technology

A New Study on the Temperature and Bias Dependence of the Kink Effects in S22 and h21 for the GaN HEMT Technology

Behavior of a traveling-wave amplifier versus temperature in SOI technology

Temperature dependence on RF avalanche breakdown of RF mosfets in the impact ionization region

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