In this paper, the design and the results of a Silicon-on-Insulator (SOI) CMOS distributed amplifier (DA) and oscillator are presented. The four stage Cascode DA (CDA) is designed with a 130 nm SOI floating body n-MOSFET in each stage requiring a chip area of 0.75 mm 2 . A gain of 7 dB and a unity-gain bandwidth of 26 GHz are measured at 1.4 V supply voltage with a measured power consumption of 54 mW . The CDA circuit has been extended to design a cascode distributed oscillator (CDO) showing a 3 dBm carrier at 10 GHz oscillating frequency, for 2.5 V supply voltage.
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