Abstract:In this article, temperature dependence on radio‐frequency (RF) avalanche effects of metal–oxide–semiconductor field‐effect transistors (MOSFETs) in the impact ionization region is investigated using RF measurements for the first time. Equivalent circuit parameters of MOSFETs including the inductive breakdown network are extracted from low to high temperatures to characterize device performance and its temperature dependency in the breakdown regime. At elevated temperatures, inductive behavior resulting from a… Show more
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