Temperature dependence of the current–voltage characteristics of Sn/PANI/p-Si/Al heterojunctions

Abstract

Sn/PANI/p-Si/Al heterojunctions were fabricated by electropolymerization of aniline on chemically cleaned p-Si substrates. Current-voltage characteristics of Sn/PANI/p-Si/Al heterojunctions measured in the temperature range 140-280 K are presented and analyzed. Although these devices were clearly rectifying, their I-V characteristics were non-ideal, which can be judged from the nonlinearity in the semi-logarithmic plots. The high values of the ideality factor n depending on the sample temperature may be ascribed to a decrease of the exponentially increasing rate in current due to space-charge injection into the PANI thin film at higher forward bias voltages. Careful analysis of the forward bias I-V characteristics on a log-log scale indicates that the space-charge-limited current (SCLC) conduction controlled by an exponential trap distribution above the valence band edge dominates the current transport in the PANI/p-Si diodes at high voltages. Furthermore, the PANI was characterized by using Fourier transform infrared (FTIR) and ultraviolet-visible (UV-vis) spectra.

Electronic properties of Al/DNA/p-Si MIS diode: Application as temperature sensor

“…That is, the shape of the I-V characteristics is not only controlled by the contacts, but strongly depends on the nature of the DNA layer between the Al electrode and the p-Si semiconductor. Generally, double-logarithmic forward bias I-V plots with a slope equal to or larger than 2 suggest the possibility of the SCLC mechanism [50][51][52][53][54]. The double-logarithmic forward bias I-V curves in Fig.…”

“…Traps are locations arising from disorders, dangling bonds, impurities, etc., and are called localized states that very often capture free-charge carriers, playing a very important role in the conduction process of an organic layer [56]. Similarly transport phenomena have been observed in dielectrics, amorphous semiconductors, wide band gap semiconductors, and other organic solids [48][49][50][51][52][53][54][55][56]. It is observed that n is greater than 1 and this is an indication that thermionic emission is not the only operative mechanism for current flow and is usually attributed to a Schottky barrier height which is bias dependent.…”

Effect of americium‐241 source activity on total conversion efficiency of diamond alpha‐voltaic battery

“…The I ‐ V plots follow a power law— I ~ V 4.91 , I ~ V 6.97 , and I ~ V 35.22 . Exponents larger than two suggest there is trap‐charge‐limited conduction with an exponent trap distribution . In the region of higher forward voltage (behind the linear regions), the series resistance plays a decisive role.…”

“…Exponents larger than two suggest there is trap-charge-limited conduction with an exponent trap distribution. 32 In the region of higher forward voltage (behind the linear regions), the series resistance plays a decisive role. Figure 3C shows the dark current of the diode in linear coordinates.…”

Influence of temperature and illumination on the characteristics of nanocrystalline Ga0.29 Al0.71As based heterojunction prepared by MOCVD

“…As known, the applicability of space-charge limited current (SCLC) mechanism requires, at least, Table 1 Parameters extracted from J-V characteristics of n-Ga0.29 Al0.71As/p-GaAs heterojunction. one Schottky contact at a metal-semiconductor interface (at the junction interface) for continuous supply of injected charge carriers to sustain SCL currents in the material [36,37]. The SCLC conduction should become important when the density of injected free-charge carriers is much larger than the thermal-free-charge-carrier density.…”