Influence of temperature and illumination on the characteristics of nanocrystalline Ga0.29 Al0.71As based heterojunction prepared by MOCVD

Influence of Irradiation Time on Structural, Morphological Properties of ZnO-NRs Films Deposited by MW-CBD and Their Photodiode Applications

“…The diode demonstrates a photoresponse behavior having low oc , low sc , and high photocurrent values. Naturally, the reason of this photoelectric effect in the structure is due to the light-induced electron generation at the depletion region [36].…”

Electrical characterization of DC sputtered ZnO/p-Si heterojunction

“…As seen from the figure the photocurrent in the ZnO/p-Si junction in reverse direction is strongly enhanced by photoillumination. This behavior gives information on the electron-hole pairs, which were effectively generated in the junction by incident photons [33,34]. The light increases the reverse bias I-V characteristics about 3200 times at −1 V. The maximum open circuit voltage (V OC ) and short-circuit current (I SC ) values for the diode were determined to be 251 mV and 19 A, respectively.…”

“…The light increases the reverse bias I-V characteristics about 3200 times at −1 V. The maximum open circuit voltage (V OC ) and short-circuit current (I SC ) values for the diode were determined to be 251 mV and 19 A, respectively. The photoelectric effect in the structure is because of the light-induced electron generation at the depletion region of the structure [33]. Fig.…”