The temperature dependence of current-voltage (I-V ) and capacitance-voltage (C-V ) characteristics of the Au/n-InP Schottky barrier diodes has been measured in the temperature range of 80-320 K. The forward I-V characteristics are analysed on the basis of standard thermionic emission (TE) theory and the assumption of a Gaussian distribution of the barrier heights (BHs). It has been shown that the ideality factor decreases while the barrier height increases with increasing temperatures, on the basis of TE theory. Furthermore, the homogeneous BH value of approximately 0.524 eV for the device has been obtained from the linear relationship between the temperature-dependent experimentally effective BHs and ideality factors. The modified Richardson plot, according to inhomogeneity of the BHs, has a good linearity over the temperature range. The value of Richardson constant A * has been found to be 5.97 A cm −2 K −2 , which is close to the theoretical value of 9.4 A cm −2 K −2 for n-InP. Moreover, the temperature coefficient of the BH is found to be −3.16 × 10 −4 eV K −1 for Au/n-InP.

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We have identically prepared as many as 60 Ti/p-Si (100) Schottky barrier diodes (SBDs) with a doping density of about 10 15 cm −3 . The Si (100)-H surfaces were obtained by wet chemical etching in diluted hydrofloric acid. We have made a statistical study related to the experimental barrier heights (BHs) and ideality factors of the diodes, and we have looked at linear relationship between BHs and ideality factors. The BHs obtained from the current-voltage (I-V) characteristics varied from 0.556 to 0.617 eV, and the ideality factor varied from 1.019 to 1.196. The experimental BH and ideality factor distributions obtained from the I-V characteristics were fitted by a Gaussian function, and their mean values were found to be 0.577 ± 0.013 eV and 1.098 ± 0.044, respectively. Furthermore, the homogeneous BH value of approximately 0.602 eV for the device was obtained from the linear relationship between experimental effective BHs and ideality factors.

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