Electronic properties of Al/DNA/p-Si MIS diode: Application as temperature sensor

Güllü, Ömer; Türüt, A.

doi:10.1016/j.jallcom.2010.09.146

Cited by 38 publications

(22 citation statements)

References 67 publications

(101 reference statements)

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“…Also, this higher value can be attributed to an insulating layer in the metal-semiconductor interface [30]. These extracted values are similar to those reported by other authors [30,32].…”

Section: Flexible Metal-insulator-semiconductor Diodessupporting

confidence: 91%

“…This value is similar to other diodes reported by other authors at higher fabrication temperature [27,31]. The forward bias current in a MIS diode is assumed to be due to thermionic emission and can be expressed as [32]:…”

Section: Flexible Metal-insulator-semiconductor Diodessupporting

confidence: 88%

“…For this reason, these devices are also known as MIS tunnel diodes [28][29][30][31]. Güllü et al [32] reported the application of MIS diodes as temperature sensors. In this section, the fabrication and characterization of fully solution-processed flexible metalinsulator-semiconductor diodes is presented.…”

Section: Flexible Metal-insulator-semiconductor Diodesmentioning

confidence: 99%

“…Typically, the ideality factor and barrier height can be extracted from the extrapolation to 0 V and its slope of the linear region of the forward bias of ln(I)-V characteristics [30,32]. The extracted values of ideality factor and barrier height were 2.9 and 0.88 eV, respectively.…”

Section: Flexible Metal-insulator-semiconductor Diodesmentioning

confidence: 99%

“…Possible mechanisms may include interface dipoles or fabrication-induced defects at the interface [32]. Also, this higher value can be attributed to an insulating layer in the metal-semiconductor interface [30].…”

Section: Flexible Metal-insulator-semiconductor Diodesmentioning

confidence: 99%

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Semiconductor Materials by Ultrasonic Spray Pyrolysis and Their Application in Electronic Devices

Dominguez¹,

Luna-López²,

Flores³

2017

Pyrolysis

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Ultrasonic spray pyrolysis is a deposition technique that enables a fine mist of the precursor solution in order to deposit higher-density thin films. This characteristic makes of great potential the use of ultrasonically spray-deposited semiconductors films for lowcost, transparent, flexible and large-area applications. In this chapter, low-temperature deposition and characterization of ultrasonically spray-deposited zinc oxide (ZnO) films are presented. The ZnO films deposited by ultrasonic spray pyrolysis at 200°C were characterized by optical transmittance, photoluminescence spectroscopy, X-ray diffraction and Fourier transform infrared spectroscopy. The study of low-temperature annealing of ZnO films is also presented. Moreover, the characterization of aluminum-doped ZnO films deposited by ultrasonic spray pyrolysis at 200°C is presented. Finally, applications of these ultrasonic spray-deposited films in electronic devices are presented.

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“…Also, this higher value can be attributed to an insulating layer in the metal-semiconductor interface [30]. These extracted values are similar to those reported by other authors [30,32].…”

Section: Flexible Metal-insulator-semiconductor Diodessupporting

confidence: 91%