The photoluminescence of n‐type indium arsenide was investigated under excitation by neodymium laser pulse radiation at the temperature of 100 K. Superluminescence by interband radiative transitions was observed. A rapid shift of the superluminescence peak position from 412 to 406 meV was found when the excitation power density increased from 0.1 to 1 MW/cm2. It is shown that the shift is caused by a change of the radiation transition character from transitions between conduction and light‐hole bands to transitions between conduction band and heavy‐hole band. The energy difference of 6 meV between the light‐hole band extrema and heavy‐hole band extrema in indium arsenide was determined for the first time by direct spectroscopic measurements.