Structures containing layers of porous silicon with two metal contacts are investigated. Porous silicon is manufactured by anodizing p-type crystalline silicon plates of resistivity of 0.4 Ω cm. Contacts for the samples are made by additional boron doping of the surface and by thermal evaporation of aluminium. Resistance and current-voltage characteristics are investigated. Response of the porous silicon layer containing structures under action of pulsed microwave radiation was investigated for the first time. The origin of the response is discussed.
A photomagnetoelectric effect has been investigated in semiconductors InAs and Cd x Hg 1−x Te (x = 0.2 and 0.26) excited by Q-switched neodymium-YAG laser. The photomagnetoelectric signal undergos double--sign-inversion when the intensity of the exciting light pulses exceeds a critical value Ic = 5 × 10 24 photons/(cm 2 s) for InAs and (1-4) × 10 24 photons/(cm 2 s) for Cd x Hg 1−x Te samples. It is shown that a frequency spectrum of photomagnetoelectric response is broadened significantly in the region of high frequencies. In general three frequency bands were distinguished. From this investigation it follows that using laser pulses of a duration topt ∼ 1−10 ps the photomagnetoelectric signal in the terahertz range may be generated.
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