Temperature dependence of device mismatch and harmonic distortion in nanoscale uniaxial-strained pMOSFETs

This paper presents a device matching study of a commercial 40-nm bulk CMOS technology operated at cryogenic temperatures. Transistor pairs and linear arrays, optimized for device matching, were characterized over the temperature range from 300 K down to 4.2 K. The device parameters relevant for mismatch, i.e., the threshold voltage and the current factor, were extracted, from which the change in both absolute value and variability as a function of temperature and device size were investigated. It is shown that the Pelgrom scaling law is valid also at 4.2 K and that the simplified Croon model is able to accurately predict drain-current mismatch from moderate to strong inversion over the entire temperature range. Additionally, the characterization of linear device arrays shows exacerbated edge-effects at extremely low temperatures, thus requiring the addition of dummy devices at the array boundary. The result of this study is the first model capable of predicting mismatch over a wide range of operating regions and temperatures.

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Characterization and Modeling of Mismatch in Cryo-CMOS

Hart

Babaie

Charbon

et al. 2020

IEEE J. Electron Devices Soc.

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Subthreshold Mismatch in Nanometer CMOS at Cryogenic Temperatures

Hart

Babaie

Charbon

et al. 2020

IEEE J. Electron Devices Soc.

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An accurate method for predicting temperature-dependent current mismatch in weak inversion region of long and wide channel MOSFET without subthreshold hump

Sakakibara

Arimoto

2014

Jpn. J. Appl. Phys.

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We have found and verified that the current mismatch σ(ΔI/I) in the weak inversion region can be accurately predicted on the basis of the transconductance efficiency g m /I when a MOSFET does not have a subthreshold hump. We have also verified that, in a relatively long and wide channel MOSFET, the value of gate-voltage mismatch σ(ΔI/g m )(LW) 1/2 in the weak inversion region converges to a constant value, regardless of the channel size and temperature. The constant value is determined by the MOSFET structure. In our method, both the convergence value of σ(ΔI/g m )(LW) 1/2 in the weak inversion region and the g m /I behavior are used as input information of the σ(ΔI/I) prediction. It is possible to take this constant convergence value as an approximate value of σ(ΔI/g m )(LW) 1/2 , also in the moderate inversion region. Using this value, our method of σ(ΔI/I) prediction can be applied to the moderate inversion region with a reasonable degree of accuracy. In addition, a method for improving the accuracy of the predictions in the strong inversion region will be presented. We will discuss the mechanism that causes the value of σ(ΔI/g m )(LW) 1/2 in the weak inversion region to become a constant value. On the other hand, when a MOSFET has a subthreshold hump, the constant value approximation of σ(ΔI/g m )(LW) 1/2 in the weak inversion region cannot be used. The value of σ(ΔI/g m )(LW) 1/2 in weak and moderate inversion regions increases with a decrease in current. This increase randomly fluctuates depending on the wafer or temperature. As a result, to predict the current mismatch σ(ΔI/I) accurately, it is necessary to remove the subthreshold hump of a MOSFET completely.

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Temperature dependence of device mismatch and harmonic distortion in nanoscale uniaxial-strained pMOSFETs

Cited by 3 publications

References 14 publications

Characterization and Modeling of Mismatch in Cryo-CMOS

Characterization and Modeling of Mismatch in Cryo-CMOS

Subthreshold Mismatch in Nanometer CMOS at Cryogenic Temperatures

An accurate method for predicting temperature-dependent current mismatch in weak inversion region of long and wide channel MOSFET without subthreshold hump

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