Temperature compensated solidly mounted bulk acoustic wave resonators with optimum piezoelectric coupling coefficient

Allah, Mohamed Abd; Kaitila, J.; Thalhammer, Robert; Weber, W.; Schmitt‐Landsiedel, D.

doi:10.1109/iedm.2009.5424224

Cited by 14 publications

(7 citation statements)

References 4 publications

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“…There are many factors influencing the effectiveness of temperature compensation when using SiO 2 as a compensated layer, such as the deposition position and the ratio between SiO 2 and negative TCF layers [ 94 , 95 , 96 ]. In the case of the position of SiO 2 layer, it is usually deposited on the topmost layer in a piezoelectric stack, which can protect resonator from moisture and contamination.…”

Section: Temperature Compensationmentioning

confidence: 99%

“…On the other hand, in order to achieve a zero-drift frequency of the BAW resonator, a large amount of SiO 2 (large ratio between the SiO 2 and piezoelectric film) is usually used, which can deadly deteriorate the electrical character of BAW. Putting SiO 2 at the high stress region of BAW is an excellent method, thus a minimum amount of SiO 2 is used without large k eff 2 reduction and Q-values loss [ 95 ]. Furthermore, a higher positive temperature compensation can be operated by using boron doped SiO 2 or SiOF as the temperature compensation layer [ 98 ].…”

Section: Temperature Compensationmentioning

confidence: 99%

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Materials, Design, and Characteristics of Bulk Acoustic Wave Resonator: A Review

et al. 2020

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With the rapid commercialization of fifth generation (5G) technology in the world, the market demand for radio frequency (RF) filters continues to grow. Acoustic wave technology has been attracting great attention as one of the effective solutions for achieving high-performance RF filter operations while offering low cost and small device size. Compared with surface acoustic wave (SAW) resonators, bulk acoustic wave (BAW) resonators have more potential in fabricating high- quality RF filters because of their lower insertion loss and better selectivity in the middle and high frequency bands above 2.5 GHz. Here, we provide a comprehensive review about BAW resonator researches, including materials, structure designs, and characteristics. The basic principles and details of recently proposed BAW resonators are carefully investigated. The materials of poly-crystalline aluminum nitride (AlN), single crystal AlN, doped AlN, and electrode are also analyzed and compared. Common approaches to enhance the performance of BAW resonators, suppression of spurious mode, low temperature sensitivity, and tuning ability are introduced with discussions and suggestions for further improvement. Finally, by looking into the challenges of high frequency, wide bandwidth, miniaturization, and high power level, we provide clues to specific materials, structure designs, and RF integration technologies for BAW resonators.

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Section: Temperature Compensationmentioning

confidence: 99%

Section: Temperature Compensationmentioning

confidence: 99%

Materials, Design, and Characteristics of Bulk Acoustic Wave Resonator: A Review

et al. 2020

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“…For example, the solid mounted resonator-type resonator, which high and low acoustic impedance films are alternately laminated offers high coupling and stability. [9][10][11] The other research reported that the film bulk acoustic resonator using compensation layer of fluorine-doped SiO 2 also offered high stability. 12) In order to improve the stability of the resonators, we have focused on the "double-layered resonator" and have studied its resonance characteristics using Ca 3 TaGa 3 Si 2 O 14 (CTGS).…”

Section: Introductionmentioning

confidence: 99%

Influence of reflected waves at the bonded boundary in double-layered thickness-shear resonator using α-quartz

Noguchi

Ohashi

Omote³

et al. 2022

Jpn. J. Appl. Phys.

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The influence of the reflected waves at the bonding boundary on the resonance waveform and temperature characteristics was investigated using α-quartz (QZ). The double-layered resonator specimen was fabricated using 129.55°Y- and 0°Y-cut QZ substrates with the thickness ratio x=0.520. The temperature characteristic at the range from 100°C to 300°C was deviated from the calculated values estimated by the equations considering thickness and electric flux density ratio proposed in the previous work, and the resonant waveform of the specimen was deteriorated as compared with that of single-layer resonators. In order to clarify these phenomena, the phase matching conditions and total amplitude in the specimen were examined. As a result, it was clarified that increase of the amplitude in the layer with lower acoustic impedance was affected to the temperature characteristic, and acoustic losses due to reflection / transmission at the bonding boundary was affected to the total amplitude of resonance.

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“…[23][24][25][26] In recent years, research has been actively conducted to achieve high coupling, low loss, and high stability by bonding dissimilar materials between thin plates of LT and LN and higher acoustic velocity support substrates such as sapphire, AlN, Si, and quartz. [27][28][29][30][31] For the bulk acoustic wave (BAW) devices, high coupling and stability have been achieved by the solid mounted resonator type thin film resonators in which high and low acoustic impedance films are alternately laminated [32][33][34] and by the film bulk acoustic resonator using compensation layer of fluorine-doped SiO 2 . 35) Although temperature dependence can be reduced by the various structures described above, they cannot be completely eliminated over a wide temperature range.…”

Section: Introductionmentioning

confidence: 99%

Development of calculation model for designing temperature characteristics of double-layered thickness-shear resonator

Ohashi,

Noguchi,

Yokota

et al. 2024

Jpn. J. Appl. Phys.

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A calculation model for predicting the temperature characteristics of the double-layered resonator (DRL) was developed by using the total strain ratio including the influence of the waves reflected at the bonding boundary. The validity of the model proposed was examined from the comparison between the measured and calculated results for a DRL specimen consisting of 129.55°Y- and 0°Y-quartz substrates. The calculation results of the model proposed demonstrated that it is possible to predict the trends of changes in experimental values of temperature characteristics not only in the 1st-order mode but also in the higher-order modes. In addition, the changes in the particle displacement distribution and temperature characteristics of the DLR obtained by the model proposed were also in good agreement with the results of finite element method (FEM) analysis. The proposed model is expected to greatly contribute to the design of DLRs with high excitation efficiency and excellent temperature characteristics.

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Temperature compensated solidly mounted bulk acoustic wave resonators with optimum piezoelectric coupling coefficient

Cited by 14 publications

References 4 publications

Materials, Design, and Characteristics of Bulk Acoustic Wave Resonator: A Review

Materials, Design, and Characteristics of Bulk Acoustic Wave Resonator: A Review

Influence of reflected waves at the bonded boundary in double-layered thickness-shear resonator using α-quartz

Development of calculation model for designing temperature characteristics of double-layered thickness-shear resonator

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