A novel device structure “double layered thickness-shear resonator” was proposed to improve the temperature characteristics of a bulk acoustic wave resonator. In order to design the double layered resonator, optimal combination of cut angles and thickness ratio of the substrates were determined from calculations using material constants and their temperature coefficients measured for a Ca3TaGa3Si2O14 (CTGS) single crystal. Based on the results, a double layered resonator was fabricated by directly bonding two CTGS substrates with cut angles of 122°Y and 171°Y under the thickness ratio of 0.248. As a result, the double layered resonator operated successfully at a fundamental mode of around 7.5 MHz like a normal resonator exhibiting temperature compensation effect. The mechanism of the deviation from the expected value observed in the measured temperature dependence of the frequency changes was discussed using the model of the wave propagation and the electric field generated in the double layer structure.
The influence of the reflected waves at the bonding boundary on the resonance waveform and temperature characteristics was investigated using α-quartz (QZ). The double-layered resonator specimen was fabricated using 129.55°Y- and 0°Y-cut QZ substrates with the thickness ratio x=0.520. The temperature characteristic at the range from 100°C to 300°C was deviated from the calculated values estimated by the equations considering thickness and electric flux density ratio proposed in the previous work, and the resonant waveform of the specimen was deteriorated as compared with that of single-layer resonators. In order to clarify these phenomena, the phase matching conditions and total amplitude in the specimen were examined. As a result, it was clarified that increase of the amplitude in the layer with lower acoustic impedance was affected to the temperature characteristic, and acoustic losses due to reflection / transmission at the bonding boundary was affected to the total amplitude of resonance.
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