Materials, Design, and Characteristics of Bulk Acoustic Wave Resonator: A Review

Liu, Yan; Cai, Yao; Zhang, Yi; Tovstopyat, Alexander; Liu, Sheng; Sun, Chengliang

doi:10.3390/mi11070630

Cited by 188 publications

(92 citation statements)

References 117 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…On the basis of the calculated d 33 and

values, YbAlN is predicted to have a superior piezoelectric performance relative to AlN and to have properties comparable to ScAlN which has garnered attention as a piezoelectric material for radio frequency filters in telecommunication devices [ 13 ]. To obtain an even greater piezoelectric response with YbAlN, higher concentrations of Yb should be dissolved into wurtzite AlN.…”

Section: Resultsmentioning

confidence: 99%

“…The piezoelectric properties of aluminum nitride (AlN)-based wurtzite solid solutions have been investigated experimentally and theoretically [ 1 , 2 , 3 , 4 , 5 , 6 , 7 , 8 , 9 , 10 , 11 ]. In particular, scandium (Sc)-doped AlN (ScAlN) exhibits high piezoelectricity and has been widely considered for use in high-frequency filters, sensors, and microelectromechanical devices [ 12 , 13 ]. Ferroelectricity has also been observed with ScAlN, so its scope of potential applications is expected to expand [ 14 ].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Significant Enhancement of Piezoelectric Response in AlN by Yb Addition

et al. 2021

View full text Add to dashboard Cite

This study employs first-principles calculations to investigate how introducing Yb into aluminum nitride (AlN) leads to a large enhancement in the material’s piezoelectric response (d33). The maximum d33 is calculated to be over 100 pC/N, which is 20 times higher than that of AlN. One reason for such a significant improvement in d33 is the elastic-softening effect, which is indicated by a decrease in the elastic constant, C33. The strain sensitivity (du/dε) of the internal parameter, u, is also an important factor for improving the piezoelectric stress constant, e33. On the basis of mixing enthalpy calculations, YbxAl1−xN is predicted to be more stable as a wurtzite phase than as a rock salt phase at composition up to x ≈ 0.7. These results suggest that Yb can be doped into AlN at high concentrations. It was also observed that the dielectric constant, ε33, generally increases with increasing Yb concentrations. However, the electromechanical coupling coefficient, k332, only increases up to x = 0.778, which is likely because of the relatively lower values of ε33 within this range.

show abstract

“…On the basis of the calculated d 33 and

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Significant Enhancement of Piezoelectric Response in AlN by Yb Addition

et al. 2021

View full text Add to dashboard Cite

show abstract

“…The fifth-generation of mobile networks (5G) has developed rapidly in recent years and bring new challenges in wireless communication and remote sensing applications [ 1 , 2 , 3 ]. This 5G technology has spurred the vast need for high-frequency wideband amplifiers and filters due to many appealing factors, including large

, complementary metal–oxide–semiconductor (CMOS)-compatibility and multi-frequency capability.…”

Section: Introductionmentioning

confidence: 99%

Anchor Loss Reduction of Lamb Wave Resonator by Pillar-Based Phononic Crystal

Tong

Han

2021

Micromachines

View full text Add to dashboard Cite

Energy leakage via anchors in substrate plates impairs the quality factor (Q) in microelectromechanical system (MEMS) resonators. Most phononic crystals (PnCs) require complicated fabrication conditions and have difficulty generating a narrow bandgap at high frequency. This paper demonstrates a pillar-based PnC slab with broad bandgaps in the ultra high frequency (UHF) range. Due to Bragg interference and local resonances, the proposed PnC structure creates notably wide bandgaps and shows great advantages in the high frequency, large electromechanical coupling coefficient (k2) thin film aluminum nitride (AlN) lamb wave resonator (LWR). The dispersion relations and the transmission loss of the PnC structure are presented. To optimize the bandgap, the influence of the material mechanical properties, lattice type, pillar height and pillar radius are explored. These parameters are also available to adjust the center frequency of the bandgap to meet the desirable operating frequency. Resonators with uniform beam anchors and PnC slab anchors are characterized. The results illustrate that the Q of the resonator improves from 1551 to 2384, and the mechanical energy leakage via the anchors is significantly decreased using the proposed PnC slab anchors. Moreover, employment of the PNC slab anchors has little influence on resonant frequency and induces no spurious modes. Pillar-based PnCs are promising in suppressing the anchor loss and further improving the Q of the resonators.

show abstract

“…PZT is one of the most widely used piezoelectric materials, LiNbO 3 has a high electromechanical coupling coefficient, and ZnO and AlN each have significant advantages in terms of their compatibility with IC technology [ 12 , 13 , 14 ]. Among these four materials, AlN has the highest acoustic wave velocity and excellent thermal conductivity [ 15 , 16 ]. Therefore, various AlN-based resonators have been reported, such as flexural mode resonators [ 17 ], film bulk acoustic wave resonators (FBAR) [ 18 ], contour mode resonators [ 19 ], and lamb wave resonators [ 20 ].…”

Section: Introductionmentioning

confidence: 99%

Temperature Characteristics of a Contour Mode MEMS AlN Piezoelectric Ring Resonator on SOI Substrate

Fei

Ren

2021

Micromachines

View full text Add to dashboard Cite

As a result of their IC compatibility, high acoustic velocity, and high thermal conductivity, aluminum nitride (AlN) resonators have been studied extensively over the past two decades, and widely implemented for radio frequency (RF) and sensing applications. However, the temperature coefficient of frequency (TCF) of AlN is −25 ppm/°C, which is high and limits its RF and sensing application. In contrast, the TCF of heavily doped silicon is significantly lower than the TCF of AlN. As a result, this study uses an AlN contour mode ring type resonator with heavily doped silicon as its bottom electrode in order to reduce the TCF of an AlN resonator. A simple microfabrication process based on Silicon-on-Insulator (SOI) is presented. A thickness ratio of 20:1 was chosen for the silicon bottom electrode to the AlN layer in order to make the TCF of the resonator mainly dependent upon heavily doped silicon. A cryogenic cooling test down to 77 K and heating test up to 400 K showed that the resonant frequency of the AlN resonator changed linearly with temperature change; the TCF was shown to be −9.1 ppm/°C. The temperature hysteresis characteristic of the resonator was also measured, and the AlN resonator showed excellent temperature stability. The quality factor versus temperature characteristic was also studied between 77 K and 400 K. It was found that lower temperature resulted in a higher quality factor, and the quality factor increased by 56.43%, from 1291.4 at 300 K to 2020.2 at 77 K.

show abstract

Materials, Design, and Characteristics of Bulk Acoustic Wave Resonator: A Review

Cited by 188 publications

References 117 publications

Significant Enhancement of Piezoelectric Response in AlN by Yb Addition

Significant Enhancement of Piezoelectric Response in AlN by Yb Addition

Anchor Loss Reduction of Lamb Wave Resonator by Pillar-Based Phononic Crystal

Temperature Characteristics of a Contour Mode MEMS AlN Piezoelectric Ring Resonator on SOI Substrate

Contact Info

Product

Resources

About