Temperature Characteristics of a Contour Mode MEMS AlN Piezoelectric Ring Resonator on SOI Substrate

Fei, Sitao; Ren, Hao

doi:10.3390/mi12020143

Cited by 16 publications

(8 citation statements)

References 46 publications

(72 reference statements)

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“…TCF was calculated as the slope of

over

and fitted to a 2nd order polynomial fit, shown in the insets, to extract linear and quadratic TCF coefficients that corresponded to the 1st and 2nd order TCF, respectively. The 1st order TCF of AlN was −28.05 ppm, which was on par with other AlN Lamb wave resonators [ 37 ]. Al

N 1st order TCF was −35.1 ppm and was also comparable to other AlScN resonators with similar Sc doping levels [ 38 ].…”

Section: Results and Discussionmentioning

confidence: 68%

Study of the Performance Enhancement of Sc-Doped AlN Super High Frequency Cross-Sectional Lamé Mode Resonators

et al. 2023

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The increasing use of mobile broadband requires new acoustic filtering technologies that can operate efficiently at frequencies above 6 GHz. Previous research has shown that AlN Super High Frequency (SHF) Cross-Sectional Lamé Mode resonators (CLMRs) can address this challenge, but their performance is limited by the piezoelectric strength of AlN. In this work, we explore the use of substitutional doping of Al in AlN with Sc to enhance the kt2 values of SHF CLMRs. Our results showed that the measured kt2·Qm product of Al72Sc28N CLMRs was four times greater than that of AlN CLMRs operating at the same frequency. Additionally, the measured fractional bandwidth (FWB) of Al72Sc28N 2nd order ladder filters was 4.13%, a fourfold improvement over AlN filters with the same design. We also discuss other aspects of the technology, such as power handling, losses, and spurious mode suppression, and identify potential areas for future research.

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“…TCF was calculated as the slope of

over

N 1st order TCF was −35.1 ppm and was also comparable to other AlScN resonators with similar Sc doping levels [ 38 ].…”

Section: Results and Discussionmentioning

confidence: 68%

Study of the Performance Enhancement of Sc-Doped AlN Super High Frequency Cross-Sectional Lamé Mode Resonators

et al. 2023

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“…First of all, a 4 × 4 TSV array is simulated and discussed. The establishment and simulation steps of the finite element model are shown in Figure 2 [ 3 , 27 ]. Figure 3 shows the structural model between the two TSVs.…”

Section: Methodsmentioning

confidence: 99%

Thermodynamic Multi-Field Coupling Optimization of Microsystem Based on Artificial Intelligence

Shan

et al. 2023

Micromachines

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An efficient multi-objective optimization method of temperature and stress for a microsystem based on particle swarm optimization (PSO) was established, which is used to map the relationship between through-silicon via (TSV) structural design parameters and performance objectives in the microsystem, and complete optimization temperature, stress and thermal expansion deformation efficiently. The relationship between the design and performance parameters is obtained by a finite element method (FEM) simulation model. The neural network is built and trained in order to understand the mapping relationship. Then, the design parameters are iteratively optimized using the PSO algorithm, and the FEM results are used to verify the efficiency and reliability of the optimization methods. When the optimization target of peak temperature, bump temperature, TSV temperature, maximum stress and maximum thermal deformation are set as 100 °C, 55 °C, 35 °C, 180 Mpa and 12 μm, the optimization results are as follows: the peak temperature is 97.90 °C, the bump temperature is 56.01 °C, the TSV temperature is 31.52 °C, the maximum stress is 247.4 Mpa and the maximum expansion deformation is 11.14 μm. The corresponding TSV structure design parameters are as follows: the radius of TSV is 10.28 μm, the pitch is 65 μm and the thickness of SiO2 is 0.83 μm. The error between the optimization result and the target temperature is 2.1%, 1.8%, 9.9%, 37.4% and 7.2% respectively. The PSO method has been verified by regression analysis, and the difference between the temperature and deformation optimization results of the FEM method is not more than 3%. The stress error has been analyzed, and the reliability of the developed method has been verified. While ensuring the accuracy of the results, the proposed optimization method reduces the time consumption of a single simulation from 2 h to 70 s, saves a lot of time and human resources, greatly improves the efficiency of the optimization design of microsystems, and has great significance for the development of microsystems.

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“…The working principle of the contour mode is depending on the applied AC signal into the device in the direction perpendicular to the surface of the piezoelectric film. Therefore, the electric field supplied across the thickness of the piezoelectric film through the piezoelectric coefficient can result in either the contour mode or lateral extensional mechanical stress [ 129 ]. Additionally, the resonator structure vibrates in a dilation-type contour mode as a result of this lateral extensional stress, which also excites a longitudinal wave moving laterally [ 130 ].…”

Section: Piezoelectric Mems Resonant Modes Based On Bulk Acoustic Wavementioning

confidence: 99%

A review of piezoelectric MEMS sensors and actuators for gas detection application

et al. 2023

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Piezoelectric microelectromechanical system (piezo-MEMS)-based mass sensors including the piezoelectric microcantilevers, surface acoustic waves (SAW), quartz crystal microbalance (QCM), piezoelectric micromachined ultrasonic transducer (PMUT), and film bulk acoustic wave resonators (FBAR) are highlighted as suitable candidates for highly sensitive gas detection application. This paper presents the piezo-MEMS gas sensors’ characteristics such as their miniaturized structure, the capability of integration with readout circuit, and fabrication feasibility using multiuser technologies. The development of the piezoelectric MEMS gas sensors is investigated for the application of low-level concentration gas molecules detection. In this work, the various types of gas sensors based on piezoelectricity are investigated extensively including their operating principle, besides their material parameters as well as the critical design parameters, the device structures, and their sensing materials including the polymers, carbon, metal–organic framework, and graphene.

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Temperature Characteristics of a Contour Mode MEMS AlN Piezoelectric Ring Resonator on SOI Substrate

Cited by 16 publications

References 46 publications

Study of the Performance Enhancement of Sc-Doped AlN Super High Frequency Cross-Sectional Lamé Mode Resonators

Study of the Performance Enhancement of Sc-Doped AlN Super High Frequency Cross-Sectional Lamé Mode Resonators

Thermodynamic Multi-Field Coupling Optimization of Microsystem Based on Artificial Intelligence

A review of piezoelectric MEMS sensors and actuators for gas detection application

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