A review of piezoelectric MEMS sensors and actuators for gas detection application

Hashwan, Saeed S. Ba; Khir, M. H. Md; Nawi, Illani Mohd; Ahmad, Mohamad Radzi; Hanif, Mehwish; Zahoor, Furqan; Al‐Douri, Y.; Algamili, Abdullah Saleh; Bature, U. I.; Alabsi, Sami Sultan; Sabbea, Mohammed O Ba; Junaid, Muhammad

doi:10.1186/s11671-023-03779-8

Cited by 29 publications

(16 citation statements)

References 343 publications

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“…Changes in mass and mechanical characteristics at the piezoelectric crystal surface, as a consequence of exposure to the target gas, can influence the oscillation frequency of the crystal. Gas adsorption, desorption, chemical reactions, or physical modifications to the mass and distribution of the gas molecules on the crystal surface may bring about response from the sensor [148,149]. The resonant frequency change brought about by gas interactions can be converted into an electrical signal.…”

Section: Other Gas Sensing Mechanismsmentioning

confidence: 99%

Plasmonic gas sensors based on nanomaterials: mechanisms and recent developments

Vaidyanathan,

Mondal,

Rout

et al. 2024

J. Phys. D: Appl. Phys.

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Sensing devices for rapid analytics are important societal requirements, with wide applications in environmental diagnostics, food testing, and disease screening. Nanomaterials present excellent opportunities in sensing applications owing to their superior structural strength, and their electronic, magnetic, and optoelectronic properties. Among the various mechanisms of gas sensing, including chemiresistive sensors, electrochemical sensors, and acoustic sensors, another promising area in this field involves plasmonic sensors. The advantage of nanomaterial-plasmonic sensors lies in the vast opportunities for tuning the sensor performance by optimizing the nanomaterial structure, thereby producing highly selective and sensitive sensors. Recently, several novel plasmonic sensors have been reported, with various configurations such as nanoarray resonator-, ring resonator-, and fiber-based plasmonic sensors. Going beyond noble metals, some promising nanomaterials for developing plasmonic gas sensor devices include two-dimensional materials, viz. graphene, transition metal dichalcogenides, black phosphorus, blue phosphorus, and MXenes. Their properties can be tuned by creating hybrid structures with layers of nanomaterials and metals, and the introduction of dopants or defects. Such strategies can be employed to improve the device performance in terms of its dynamic range, selectivity, and stability of the response signal. In this review, we have presented the fundamental properties of plasmons that facilitate its application in sensor devices, the mechanism of sensing, and have reviewed recent literature on nanomaterial-based plasmonic gas sensors. This review briefly describes the status quo of the field and future prospects.

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Section: Other Gas Sensing Mechanismsmentioning

confidence: 99%

Plasmonic gas sensors based on nanomaterials: mechanisms and recent developments

Vaidyanathan,

Mondal,

Rout

et al. 2024

J. Phys. D: Appl. Phys.

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“…There are multiple causes for the piezoelectric materials resonance frequency changes: (1) the accumulation of mass on the surface of the crystal changes the resonance frequency; (2) the catalytic oxidation of the target gas on the surface of the crystal increases the temperature and causes an increase in the resonance frequency of the crystal. 294 Various noble metal catalyst coatings have been tested and a Pt-Ir film resulted in the best performance; 295 (3) the change in target gas concentration (e.g., H 2 , CH 4 , or NH 3 ) results in a shift of the sound-resonance state of the piezoelectric element. A piezoelectric-sound-resonance-cavity (PSRC) sensor, for example, utilizes this mechanism.…”

Section: Gasmentioning

confidence: 99%

Recent Developments in Sensor Technologies for Enabling the Hydrogen Economy

Ramaiyan,

Tsui,

Brosha

et al. 2023

ECS Sens. Plus

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Efforts to create a sustainable hydrogen economy are gaining momentum as governments all over the world are investing in hydrogen production, storage, distribution, and delivery technologies to develop a hydrogen infrastructure. This involves transporting hydrogen in gaseous or liquid form or using carrier gases such as methane, ammonia, or mixtures of methane and hydrogen. Hydrogen is a colorless, odorless gas and can easily leak into the atmosphere leading to economic loss and safety concerns. Therefore, deployment of robust low-cost sensors for various scenarios involving hydrogen is of paramount importance. Here, we review some recent developments in hydrogen sensors for applications such as leak detection, safety, and process monitoring in production, transport, and use scenarios. The status of methane and ammonia sensors is covered due to their important role in hydrogen production and transportation using existing natural gas and ammonia infrastructure. This review further provides an overview of existing commercial hydrogen sensors and also addresses the potential for hydrogen as an interferent gas for currently used sensors. This review can help developers and users make informed decisions about how to drive hydrogen sensor technology forward and to incorporate hydrogen sensors into the various hydrogen deployment projects in the coming decade.

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“…Silicon oxide (SiO x ) and silicon nitride (SiN x ) films have been widely used in various microdevices, such as logic, memory, and microelectromechanical systems devices [1][2][3][4]. Reactive ion etching with fluorocarbon gases and sulfur hexafluoride has been used to pattern SiO x and SiN x thin films in dry atmospheres [5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

High-rate etching of silicon oxide and nitride using narrow-gap high-pressure (3.3 kPa) hydrogen plasma

Nomura,

Kakiuchi,

Ohmi

2024

J. Phys. D: Appl. Phys.

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We investigated the etching behavior of silicon oxide (SiOx) and silicon nitride (SiNx) in narrow-gap, high-pressure (3.3 kPa) hydrogen (H2) plasma under various etching conditions. Maximum etching rates of 940 and 240 nm/min for SiOx and SiNx, respectively, were obtained by optimizing the H2 gas flow rate. The dependence of the etching rate on gas flow rate implied that effective elimination of etching products is important for achieving high etching rates because it prevents redeposition. The sample surfaces, especially the oxide surfaces, were roughened and contained numerous asperities after etching. Etching rates of both SiOx and SiNx decreased as the temperature was raised. This suggests that atomic H adsorption, rather than H-ion bombardment, is an important step in the etching process. X-ray photoelectron spectroscopy revealed that the etched nitride surface was enriched in silicon (Si), suggesting that the rate-limiting process in high-pressure H2 plasma etching is Si etching rather than nitrogen abstraction. The etching rate of SiOx was three times higher than that of SiNx despite the higher stability of Si–O bonds than Si–N ones. One reason for the etching difference may be the difference between the bond densities of SiOx and SiNx. This study presents a relatively non-toxic, low-cost, and eco-friendly dry etching process for Si-based dielectrics using only H2 gas in comparison with the conventional F-based plasma etching methods.

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A review of piezoelectric MEMS sensors and actuators for gas detection application

Cited by 29 publications

References 343 publications

Plasmonic gas sensors based on nanomaterials: mechanisms and recent developments

Plasmonic gas sensors based on nanomaterials: mechanisms and recent developments

Recent Developments in Sensor Technologies for Enabling the Hydrogen Economy

High-rate etching of silicon oxide and nitride using narrow-gap high-pressure (3.3 kPa) hydrogen plasma

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