Te doping with dimethylditelluride during organometallic vapor phase epitaxy of GaAs

Li, W.M.; Chen, C.Y.; Cohen, Ronald S.

doi:10.1016/0022-0248(95)00224-3

Cited by 9 publications

(3 citation statements)

References 13 publications

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“…This is consistent with several studies which report that carrier saturation occurs at concentrations above 10 19 cm À3 [22,23,16], and suggests that there is no formation of a Te-rich second phase in these samples.…”

Section: Resultssupporting

confidence: 93%

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Te surfactant effects on the morphology of patterned (001) GaAs homoepitaxy

Wixom

Rieth

Stringfellow

2004

Journal of Crystal Growth

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Section: Resultssupporting

confidence: 93%

“…Te, which is a common n-type dopant for GaAs [16], has been demonstrated to have interesting surfactant properties even at very low coverage. It has been reported to destroy step bunching in GaAs [17], reduce CuPt ordering in GaInP [18], and suppress three dimensional (3D) growth in InGaAs [19].…”

Section: Introductionmentioning

confidence: 99%

Te surfactant effects on the morphology of patterned (001) GaAs homoepitaxy

Wixom

Rieth

Stringfellow

2004

Journal of Crystal Growth

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“…Opposed tendencies are reported in the literature. In [Sun91] is concluded that the surface morphology of heavily Te-doped GaAs is improved if the growth rate is decreased below 1.2 µm/hr, whereas in [Li95] growth rates as high as 6 µm/hr are reported to produce better surface morphologies. The origin of the surface degradation postulated in these works were the lattice expansion generated by the incorporation of Te in As sites [Houng86][Sun91], or the formation of a second phase for high Te mole fractions and low V/III ratios [Li95].…”

Section: Surface Morphology Of Heavily Te-doped Gaasmentioning

confidence: 99%

Desarrollo de células solares de doble unión de GaInP/GaAs para concentraciones luminosas elevadas (Development of GaInP/GaAs dual-junction solar cells for high light concentrations).

Vara¹

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This Thesis deals with the development of the monolithic GaInP/GaAs dual-junction solar cell for high concentration applications, including its theoretical analysis and modeling, and the experimental manufacture and characterization of the needed semiconductor structures grown by metal-organic vapour phase epitaxy (MOVPE), and of the final concentrator solar cell devices. A special emphasis is put on the optimization of the solar cell concentration response, as the most important distinctive characteristic when compared to other GaInP/GaAs dual-junction solar cells developed in other laboratories.In the first part of this Thesis, a theoretical study of the concentrator GaInP/GaAs dualjunction solar cell is presented. The efficiency limit of different configurations of this solar cell, and the intrinsic model of the monolithic, series connected approach are analyzed. The extrinsic properties and distributed effects exhibited by this kind of devices are then studied by using quasi-3D models based on distributed circuit units. The optimum front grid layout for the operation of our GaInP/GaAs dual-junction solar cell under high concentrations is designed, and the effect of non-uniform light profiles is appraised.The second part begins with an introduction to the experimental research carried out in this Thesis, in which the MOVPE technology available at I.E.S. -U.P.M. is described. A review of the semiconductor material and solar cell device characterization techniques used is also presented, emphasizing on the issues specific to the dual-junction solar cell devices.The experimental development of the GaInP top cell, the tunnel junction and the complete dual-junction solar cell is then dealt with. As for the GaInP top cell, the MOVPE growth of the GaInP and Al(Ga)InP materials is first tackled. These materials are then used to build the semiconductor structure of the GaInP solar cell, paying an special attention to the front and back surface passivation. As for the tunnel junction, the material research conducted to obtain very high doping levels in GaAs and AlGaAs is firstly treated. Then the experimental work concerning the study of the main tunnel junction semiconductor structure approaches developed in this Thesis is presented. Both the performance of the tunnel junction devices fabricated and the influence of their MOVPE growth on the growth and quality of the GaInP top cell is assessed in each case. A record peak current density of 10100 A/cm 2 and a series resistance at zero bias as low as 1.6•10 -5 Ω•cm 2 are achieved with a AlGaAs/GaAs tunnel junction doped with carbon and tellurium.In the last chapter of this part, the most representative dual-junction solar cell designs developed in this Thesis are explained and analyzed by means of quantum efficiency, I-V curves and concentration response measurements. The weaknesses of each design are iv assessed experimentally and theoretically in order to determine the modifications required to improve the performance of the solar cell. An efficiency of 32.6 % at 1000 ...

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