Te surfactant effects on the morphology of patterned (001) GaAs homoepitaxy

eneSurfactant effects associated with Te-doped InPAs alloys

“…© 2007 American Institute of Physics. 6 Nonplanar growth of Te-doped GaAs interpreted with Monte Carlo simulations supports this assertion, 7 and similar arguments were advanced to explain Te-induced elimination of CuPt ordering in InGaP 2 . Our TPV cell design utilizes unstrained InGaAs grown on InP using strain-relaxed InPAs buffer layers to relieve lattice mismatch.…”

“…Unlike similar Si concentrations, high Te concentrations also suppress the incorporation of As into InPAs. [4][5][6][7][8][9] For instance, an early study found that deposition of a Te monolayer on GaAs delays the two dimensional to three dimensional growth transformation for subsequent depositions of InGaAs or InAs. We infer that surfactant effects produced by the segregated Te cause the observed changes in surface morphology and As incorporation.…”

Te doping of GaAs using metalorganic vapor phase epitaxy: Volatile versus nonvolatile behavior

“…͑111͒A, while for the lowest growth rate ͑G R =1 m / h͒ the tendency is reversed, and substrate miscut 2°→ ͑111͒A produces a higher value of N D . Again, this result is unusual since for most dopants the variation in doping levels with the substrate misorientation does not change with the growth rate 12,13 ͑i.e., when a given orientation produces a higher incorporation of dopant, this trend remains no matter the value of the growth rate͒. To explain the evolution in Fig.…”

“…10 In the case of GaAs doped with Te, its surfactant effect has attracted some attention in the literature where several theoretical studies have been published, 11 as well as other works relating Te surfactant action with the resultant epilayer morphology. 12 However, its influence on dopant incorporation has not yet been studied.…”

Metal Organic Vapor Phase Epitaxy Chemical Kinetics

“…The use of these computational methods, as applied to surfaces, has tremendously aided our understanding of the growth process. Such atoms, often referred to as surfactants, have altered the surface morphology, surface crystallographic structure, and defect structure of growing films [45,47,53,57,[166][167][168][169][170]. Once understood, there can be numerical investigations of various chemical pathways and reactions on the surface.…”