eneSurfactant effects associated with Te-doped InPAs alloys

Abstract

Articles you may be interested inStructural, morphological, and defect properties of metamorphic In0.7Ga0.3As/GaAs0.35Sb0.65 p-type tunnel field effect transistor structure grown by molecular beam epitaxy Heavily carbon-doped In 0.53 Ga 0.47 As on InP (001) substrate grown by solid source molecular beam epitaxy

Effects of antimony (Sb) incorporation on MOVPE grown InAsyP1−y metamorphic buffer layers on InP substrates

“…2, we see that the alternative gradient slightly improved the RMS of the surface roughness to 14 nm when compared with 16 nm for the standard gradient. This result is consistent with observations from the literature, which show that 'convex' compositional gradients improve the surface morphology [5] and that growth of the InAs y P 1 À y MBL without the use of 'surfactants' can lead to RMS values of the surface roughness being greater than 10 nm [6]. Note that in Fig.…”

“…larger lattice constant side) of the InP substrate peak, due to the upper 500 nm InAs y P 1 À y layer. The alternative grade design was inspired by reports of a 5-step design targeting InAs 0.25 P 0.75 [9] and a 3-5 step design targeting InAs 0.32 P 0.68 [6], which achieved surface roughnesses of o1 and 1.2 nm, respectively. Note that the specified compositions refer to the uppermost InAs y P 1 À y layer of the respective MBL and they do not indicate that the MBL is a single layer structure; this convention is used throughout the manuscript.…”

“…Also, the low-temperature growth of an InP buffer layer has been shown to improve the mosaic spread and PL intensity of an InAs y P 1 À y MBL [4]. Other studies have indicated that the use of non-linear compositional gradients [5] or the incorporation of tellurium as a dopant [6,7] can improve the surface morphology of MBL.…”

The development of (InGa)As thermophotovoltaic cells on InP using strain-relaxed In(PAs) buffers

“…The superior morphology of In(PAs):Te compared to In(PAs):Si motivated the decision to use Te as the n-type dopant for the In(PAs) buffer [15,18]. However, this decision produces a problem when trying to generate sharp concentration profiles due to the aforementioned tendency for Te to surface segregate.…”

“…The AsH 3 flow was maintained at 86 sccm, producing a V/III equal to 95. The Te surface segregation layer formed on III-V materials makes growth of abrupt junctions challenging [15]. Tunnel junction optimization required determining a purge time between the n-InGaAs:Te layer and the p-InGaAs:Zn layer.…”