TDS and RB Studies of Ar Implanted to Si

Thermal Desorption Studies of Ar+Implanted Silicon

“…Two kinds of peaks were observed, as in the case of lower implantation energies (< 50 keV), which conrms that implanted Ar ions are in two states. It was shown that the peak corresponding to the Ar release from bubbles is present also for E i > 50 keV, despite the conclusions in [13]. The order of peaks is inversed, compared to that presented in [13].…”

“…It was shown that the peak corresponding to the Ar release from bubbles is present also for E i > 50 keV, despite the conclusions in [13]. The order of peaks is inversed, compared to that presented in [13]. The spectra were collected for two heating ramp rates, which enabled estimation of diusion activation energy according to Redhead method (Q = 2.0 eV for E i = 85 keV and Q = 1.75 eV for E i = 115 keV).…”

“…The second type of Ar release, being a diusion controlled process, is observed for slightly higher temperatures (≈ 950960 K) as a broad peak. It should be mentioned here that such two-peak structure of TDS spectra was discussed in [13]. Let us note that for lower implantation energies (2060 keV) the dierent order of the observed peaks: the diusion driven peak was observed earlier, as the projected ranges of implantations were much smaller.…”

“…Let us note that for lower implantation energies (2060 keV) the dierent order of the observed peaks: the diusion driven peak was observed earlier, as the projected ranges of implantations were much smaller. The authors of paper [13] stated also that the peak A disappears for E i larger than 50 keV, while in the light of the inverse order observed for E i = 85 keV and higher one should rather conclude that peaks A and B simply overlap. The shape of the B peak changes with increasing E i : for smaller E i it is narrower and well--dened while for 145 keV and 175 it becomes at and much smaller than the peak A.…”

“…TDS spectra of argon implanted silicon samples were obtained for very low (100 eV [11]) and low (1 keV [12]) implantation energies, as well as for moderate energies typical for semiconductor device ion implantation processing (2060 keV [13]). It was found in [13] that implanted Ar are in two dierent states in Si, which resulted in two peaks in TDS spectra. The presence of two kinds of peaks was also observed in the case of He implanted SiC [3] and diamond implanted with deuterium [14].…”