Microstructural evolution upon annealing in Ar-implanted Si

Li, B.S.; Zhang, C.H.; Yang, Yitao; Zhang, L.Q.; Xu, Chaoliang

doi:10.1016/j.apsusc.2011.05.129

Cited by 10 publications

(3 citation statements)

References 28 publications

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“…However, for the Si ion‐irradiated sample with LBE corrosion, no crystalline peaks are visible and a broad band at 485 cm −1 is visible. It is attributed to the existence of amorphous Si . In addition, the Raman scattering peaks of liquid‐bismuth alloy were measured and there are two Raman scattering peaks located at 273 and 365 cm −1 .…”

Section: Resultsmentioning

confidence: 99%

Dissolution corrosion of 4H‐SiC in lead‐bismuth eutectic at 550°C

Sheng

Liu

et al. 2019

Materials & Corrosion

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The corrosion behavior of 4H-SiC in lead-bismuth (Pb-Bi) eutectic (LBE) at 550°C is investigated. To clarify the effect of irradiation damage on corrosion, samples with and without Si 5+ ion irradiation are contrastively evaluated. The main results show that dissolution corrosion occurs in both unirradiated and irradiated samples, while the irradiation damage can accelerate the corrosion rate. The corroded surface is characterized by the loss of C element and the formation of amorphous layers with a slight enrichment of Si atoms. The possible reasons are discussed. K E Y W O R D S corrosion, microstructure, nuclear materials, radiation damage, SiC

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Section: Resultsmentioning

confidence: 99%

Dissolution corrosion of 4H‐SiC in lead‐bismuth eutectic at 550°C

Sheng

Liu

et al. 2019

Materials & Corrosion

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“…As a result, the formation of gas-filled * julien.deres@univ-poitiers.fr extended defects such as platelets and bubbles is generally favored. This phenomenon is essentially independent of the host materials, since it has been reported in metals [6][7][8][9][10], covalent systems such as silicon [11][12][13][14][15][16][17][18][19][20], silicon carbide [21][22][23][24][25][26], gallium nitride [27], and disordered materials [28][29][30]. However, knowing why the bubbles form does not provide information about the formation mechanism itself, or about the properties of these bubbles.…”

Section: Introductionmentioning

confidence: 99%

Properties of helium bubbles in covalent systems at the nanoscale: A combined numerical and experimental study

Dérès¹,

David²,

Alix³

et al. 2017

Phys. Rev. B

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The properties of nanometric-sized helium bubbles in silicon have been investigated using both spatially resolved electron-energy-loss spectroscopy combined with a recently developed method, and molecular-dynamics simulations. The experiments allowed for an accurate determination of size, aspect ratio, and helium density for a large number of single bubbles, whose diameters ranged from 6 to 20 nm. Very high helium densities, from 60 to 180 He nm −3 , have been measured depending on the conditions, in stark contrast with previous investigations of helium bubbles in metal with similar sizes. To supplement experiments on a smaller scale, and to obtain insights into the silicon matrix state, atomistic calculations have been performed for helium bubbles in the diameter range 1-13 nm. Molecular-dynamics simulations revealed that the maximum attainable helium density is critically related to the strength of the silicon matrix, which tends to yield by amorphization at the highest density levels. Calculations give helium density values for isolated single bubbles that are typically lower than measurements. However, excellent agreement is recovered when the interactions between bubbles and the presence of helium interstitials in the matrix are taken into account. Both experiments and numerical simulations suggest that the Laplace-Young law cannot be used to predict helium density in nanometric-sized bubbles in a covalent material such as silicon.

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“…In Li et al’s report [ 43 ], a high density of extended defects was kept stable in Ar-implanted Si followed by 1100 °C annealing. This can be attributed to cavities that act as a sink for interstitials, and therefore the defect annealing is more efficient in He-implanted Si than Ar implantation.…”

Section: Resultsmentioning

confidence: 99%

Microstructure Evolution in He-Implanted Si at 600 °C Followed by 1000 °C Annealing

et al. 2021

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Si single crystal was implanted with 230 keV He+ ions to a fluence of 5 × 1016/cm2 at 600 °C. The structural defects in Si implanted with He at 600 °C and then annealed at 1000 °C were investigated by transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HRTEM). The microstructure of an as-implanted sample is provided for comparison. After annealing, rod-like defects were diminished, while tangled dislocations and large dislocation loops appeared. Dislocation lines trapped by cavities were directly observed. The cavities remained stable except for a transition of shape, from octahedron to tetrakaidecahedron. Stacking-fault tetrahedrons were found simultaneously. Cavity growth was independent of dislocations. The evolution of observed lattice defects is discussed.

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Microstructural evolution upon annealing in Ar-implanted Si

Cited by 10 publications

References 28 publications

Dissolution corrosion of 4H‐SiC in lead‐bismuth eutectic at 550°C

Dissolution corrosion of 4H‐SiC in lead‐bismuth eutectic at 550°C

Properties of helium bubbles in covalent systems at the nanoscale: A combined numerical and experimental study

Microstructure Evolution in He-Implanted Si at 600 °C Followed by 1000 °C Annealing

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