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The best method for the impurity doping to the host material is the ion implantation. Due to high melting point of the rare earth standard metal ion sources are useless. One of the solution is to use chemical compounds of rare earths characterized by low melting point. In this paper we describe the novel design of the ion source suitable for refractory metal (e.g., rare earths) ion implantation. The dependencies of Eu(+) current on cathode and arc currents as well as on hydrogen flow are presented. Europium (III) chloride as the source of the europium atoms was used. Europium ions were produced during collisions of evaporated and decomposed EuCl(3) molecules with fast electrons. The typical current of the europium ion beam extracted from the ion source was 25 microA for the extraction voltage of 25 kV. The ion source works without maintenance breaks for approximately 50 h, which enables high dose implantation. The presented ion source needs neither advanced high power supplies nor high vacuum regime.

The motion of circular wave packets for one electron in a central Coulomb field with a high atomic number Z is calculated. The wave packet is defined in terms of solutions of the Dirac equation in order to take into account all possible relevant effects, in particular the spin-orbit potential. A time scale is defined within which spin dynamics must be taken into account, mainly in atoms with high Z. Within this time scale there exists a mechanism of collapses and revivals of the spin, already shown by the authors for harmonic oscillator potential and called the spin-orbit pendulum. Though this effect does not have the exact periodicity of the simpler model, the wave packet spatial motion is nevertheless quite similar.

It is well known that ion implantation is one of the basic tools for semiconductor device fabrication. The implantation process itself damages, however, the crystallographic lattice of the semiconductor. Such damage can be removed by proper post-implantation annealing of the implanted material. Annealing also allows electrical activation of the dopant and creates areas of different electrical types in a semiconductor. However, such thermal treatment is particularly challenging in the case of gallium nitride since it decomposes at relatively low temperature (~800 °C) at atmospheric pressure. In order to remove the implantation damage in a GaN crystal structure, as well as activate the implanted dopants at ultra-high pressure, annealing process is proposed. It will be described in detail in this paper. P-type GaN implanted with magnesium will be briefly discussed. A possibility to analyze diffusion of any dopant in GaN will be proposed and demonstrated on the example of beryllium.

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From the wide range of engineering materials traditional Stellite 6 (cobalt alloy) exhibits excellent resistance to cavitation erosion (CE). Nonetheless, the influence of ion implantation of cobalt alloys on the CE behaviour has not been completely clarified by the literature. Thus, this work investigates the effect of nitrogen ion implantation (NII) of HIPed Stellite 6 on the improvement of resistance to CE. Finally, the cobalt-rich matrix phase transformations due to both NII and cavitation load were studied. The CE resistance of stellites ion-implanted by 120 keV N+ ions two fluences: 5 × 1016 cm−2 and 1 × 1017 cm−2 were comparatively analysed with the unimplanted stellite and AISI 304 stainless steel. CE tests were conducted according to ASTM G32 with stationary specimen method. Erosion rate curves and mean depth of erosion confirm that the nitrogen-implanted HIPed Stellite 6 two times exceeds the resistance to CE than unimplanted stellite, and has almost ten times higher CE reference than stainless steel. The X-ray diffraction (XRD) confirms that NII of HIPed Stellite 6 favours transformation of the ε(hcp) to γ(fcc) structure. Unimplanted stellite ε-rich matrix is less prone to plastic deformation than γ and consequently, increase of γ phase effectively holds carbides in cobalt matrix and prevents Cr7C3 debonding. This phenomenon elongates three times the CE incubation stage, slows erosion rate and mitigates the material loss. Metastable γ structure formed by ion implantation consumes the cavitation load for work-hardening and γ → ε martensitic transformation. In further CE stages, phases transform as for unimplanted alloy namely, the cavitation-inducted recovery process, removal of strain, dislocations resulting in increase of γ phase. The CE mechanism was investigated using a surface profilometer, atomic force microscopy, SEM-EDS and XRD. HIPed Stellite 6 wear behaviour relies on the plastic deformation of cobalt matrix, starting at Cr7C3/matrix interfaces. Once the Cr7C3 particles lose from the matrix restrain, they debond from matrix and are removed from the material. Carbides detachment creates cavitation pits which initiate cracks propagation through cobalt matrix, that leads to loss of matrix phase and as a result the CE proceeds with a detachment of massive chunk of materials.

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