Formation of InAs quantum dots in silicon by sequential ion implantation and flash lamp annealing

Prucnal, S.; Turek, M.; Droździel, A.; Pyszniak, K.; Zhou, Shengqiang; Kanjilal, A.; Skorupa, W.; Żuk, J.

doi:10.1007/s00340-010-4140-5

Cited by 34 publications

(16 citation statements)

References 29 publications

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“…Figure 3(a) shows the Raman spectra obtained from selenium implanted Si as well as a reference single crystalline Si. The as-implanted sample shows a broad Raman band at around 460 cm −1 , which corresponds to the amorphous silicon formed during ion implantation 36 . After PLA or FLA, both samples exhibit a peak at 520 cm −1 , corresponding to the transverse optical (TO) phonon mode of crystalline Si.…”

Section: Resultsmentioning

confidence: 99%

Hyperdoping silicon with selenium: solid vs. liquid phase epitaxy

Zhou

Liu

Prucnal

et al. 2015

Sci Rep

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Chalcogen-hyperdoped silicon shows potential applications in silicon-based infrared photodetectors and intermediate band solar cells. Due to the low solid solubility limits of chalcogen elements in silicon, these materials were previously realized by femtosecond or nanosecond laser annealing of implanted silicon or bare silicon in certain background gases. The high energy density deposited on the silicon surface leads to a liquid phase and the fast recrystallization velocity allows trapping of chalcogen into the silicon matrix. However, this method encounters the problem of surface segregation. In this paper, we propose a solid phase processing by flash-lamp annealing in the millisecond range, which is in between the conventional rapid thermal annealing and pulsed laser annealing. Flash lamp annealed selenium-implanted silicon shows a substitutional fraction of ~ 70% with an implanted concentration up to 2.3%. The resistivity is lower and the carrier mobility is higher than those of nanosecond pulsed laser annealed samples. Our results show that flash-lamp annealing is superior to laser annealing in preventing surface segregation and in allowing scalability.

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Section: Resultsmentioning

confidence: 99%

Hyperdoping silicon with selenium: solid vs. liquid phase epitaxy

Zhou

Liu

Prucnal

et al. 2015

Sci Rep

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“…Therefore, we decided to use RTA to form III-As NCs in Si. As already observed by Prucnal et al [15,16], it is emphasized that the depth profile of arsenic in the (As/In) as-implanted sample is much broader than that predicted from the SRIM simulations due to their diffusion during the In implantation process. The microstructural properties of the GaAs (Fig.…”

Section: Results and Discussion 31 Binary Ncs Formation In Simentioning

confidence: 66%

Ion beam synthesis of embedded III‐As nanocrystals in silicon substrate

Khelifi

Frégnaux

Gall

et al. 2014

Phys. Status Solidi C

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Our goal is to use the versatility of ion beam synthesis to grow nanocrystals of InxGa1‐xAs alloys embedded in a silicon substrate. We study, first, the annealing conditions necessary to grow well defined InAs and GaAs binary nanocrystals. High dose of As, Ga and In is implanted, respectively, at 130, 130 and 180 keV to have overlapping as‐implanted profiles. The nanocrystals growth is then achieved by rapid thermal annealing at various temperatures between 650 and 800 °C for 1 min under an argon gas flow. Rutherford backscattering spectroscopy profiles show that no significant impurity out‐diffusion occurs below 800 °C for both systems. In and As thermal redistributions lead to superposed profiles. Raman spectroscopy measurements prove that InAs nanocrystals are formed above 650 °C, while 800 °C annealing is necessary to obtain GaAs nanocrystals and show that these thermal budgets are enough to fully recrystallize the implanted layer. Grazing incidence X‐ray diffraction patterns exhibit clearly InAs and GaAs related peaks. These results prove that GaAs and InAs nanocrystals can be grown in a common temperature range (700‐800 °C), opening the route to the growth of ternary InxGa1‐xAs alloys in the same conditions. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…Попытки ионного синтеза полупроводниковых соединений А III В V предпринимались неоднократно [8][9][10]. Однако до недавнего времени эти попытки были эпизо-дическими, и лишь в последние годы появились целенаправленные исследования процессов ионного синтеза и свойств нанокристаллов соединений А III В V в кремнии [11][12][13].…”

Section: Introductionunclassified

Диффузия и взаимодействие In и As, имплантированных в пленки SiO-=SUB=-2-=/SUB=-

Тысченко¹,

Voelskow

Михайлов³

et al. 2019

Физика И Техника Полупроводников

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By means of Rutherford backscattering spectrometry, electron microscopy, and energy-dispersive X-ray spectroscopy, the distribution and interaction of In and As atoms implanted into thermally grown SiO_2 films to concentrations of about 1.5 at % are studied in relation to the temperature of subsequent annealing in nitrogen vapors in the range of T = 800–1100°C. It is found that annealing at T = 800–900°C results in the segregation of As atoms at a depth corresponding to the As^+-ion range and in the formation of As nanoclusters that serve as sinks for In atoms. An increase in the annealing temperature to 1100°C yields the segregation of In atoms at the surface of SiO_2 with the simultaneous enhanced diffusion of As atoms. The corresponding diffusion coefficient is D _As = 3.2 × 10^–14 cm^2 s^–1.

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Formation of InAs quantum dots in silicon by sequential ion implantation and flash lamp annealing

Cited by 34 publications

References 29 publications

Hyperdoping silicon with selenium: solid vs. liquid phase epitaxy

Hyperdoping silicon with selenium: solid vs. liquid phase epitaxy

Ion beam synthesis of embedded III‐As nanocrystals in silicon substrate

Диффузия и взаимодействие In и As, имплантированных в пленки SiO-=SUB=-2-=/SUB=-

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