Annealing ambient on the evolution of He-induced voids in silicon

Li, B.S.; Zhang, C.H.; Zhong, Yuanhong; Wang, Dingping; Zhou, Lihong; Yang, Yitao; Zhang, L.Q.; Zhang, H.H.; Zhang, Y.; Han, L.H.

doi:10.1016/j.apsusc.2011.02.125

Cited by 9 publications

(4 citation statements)

References 25 publications

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“…In theory, combining these experiments could allow following the structural and chemical evolution of the bubbles. However, as the implantation conditions [32][33][34] and the annealing procedure [35][36][37] play a crucial role in the bubble formation and evolution, the relevance of a comparison between different experiments is seriously limited.…”

Section: Introductionmentioning

confidence: 99%

Evolution of the properties of helium nanobubbles during in situ annealing probed by spectrum imaging in the transmission electron microscope

et al. 2018

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The evolution of nanometric helium bubbles in silicon has been investigated using spatially resolved electron energy-loss spectroscopy during in situ annealing in the transmission electron microscope. This approach allows the simultaneous determination of both the morphology and the helium density in the bubbles at each step of the annealing. Structural modification and helium emission from bubbles of various diameters in the range 7.5 to 20 nm and various aspect ratios of 1.1 to 1.9 have been studied. We clearly show that helium emission takes place at temperatures where bubble migration had hardly started. At higher temperatures, the migration (and coalescence) of voids is clearly revealed. For helium density lower than 150 He nm −3 , the Cerofolini's model taking into account the thermodynamical properties of an ultradense fluid reproduces well the helium emission from the bubbles, leading to an activation energy of 1.8 eV. When bubbles exhibit a higher initial helium density, the Cerofolini's model fails to reproduce the helium emission kinetics. We ascribe this to the fact that helium may be in the solid phase and we propose a tentative model to take into account the properties of the solid.

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Section: Introductionmentioning

confidence: 99%

Evolution of the properties of helium nanobubbles during in situ annealing probed by spectrum imaging in the transmission electron microscope

et al. 2018

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“…Vacancy-type defects introduced by He-or Ar-ion implantation and their impacts on positron annihilation parameters have been a topic of interest. [15][16][17][18][19][20][21][22][23] In general, their effects are clearly observed after post-implantation annealing. An onset annealing temperature depends on implantation conditions, but these temperatures are close to the migration temperature of V 2 (250-300 C).…”

Section: Resultsmentioning

confidence: 99%

“…Positron annihilation is a powerful technique for evaluating vacancy-type defects in semiconductors. 11) Defects introduced by conventional ion implantation into Si have been investigated using this method, [12][13][14][15][16][17][18][19][20][21][22][23] and the results show that positrons are a powerful probe for studying point defects in the subsurface region of materials. In the present study, we have used a monoenergetic positron beam to probe vacancy-type defects in Ar cluster ion implanted Si.…”

Section: Introductionmentioning

confidence: 99%

Vacancy-Type Defects Introduced by Gas Cluster Ion-Implantation on Si Studied by Monoenergetic Positron Beams

Uedono

Moriya

Tsutsui

et al. 2012

Jpn. J. Appl. Phys.

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Vacancy-type defects in Ar and B gas cluster ion-implanted Si were probed by monoenergetic positron beams. The acceleration energy of the clusters ranged between 20–60 keV, and the mean cluster size was 2×103 atoms. Doppler broadening spectra of the annihilation radiation were measured, and the vacancy-rich region was found to localize at a depth of 0–13 nm. Measurements of the lifetime spectra of positrons revealed that two different defect species coexisted in the damaged region introduced by Ar gas cluster implantation, and these were identified as divacancy-type defects and large vacancy clusters filled with Ar. The formation of the vacancy clusters was attributed to extremely high temperature and its rapid transients in impact regions of Ar cluster ions. For B gas cluster ion implanted Si, the detected momentum distribution of electrons in the damaged region was broader than that in the defect free Si, suggesting that the trapping of positrons by open spaces adjacent of B clusters.

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“…The smart-cut process depends on different parameters, such as temperature and annealing time [ 8 ], He and H fluences [ 14 ], the He to H fluences ratio [ 15 ], He and H relative depth distributions (imposed by respective ion energies [ 16 ]) and the relative order of He and H implantation [ 17 ]. In the early period, most interest in the applications of this method was devoted to studying helium bubble formation and evolution in semiconductors [ 18 , 19 , 20 , 21 , 22 , 23 ]. During He implantation, numerous helium atoms and cascade collision-induced Frenkel pairs are introduced.…”

Section: Introductionmentioning

confidence: 99%

Microstructure Evolution in He-Implanted Si at 600 °C Followed by 1000 °C Annealing

et al. 2021

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Si single crystal was implanted with 230 keV He+ ions to a fluence of 5 × 1016/cm2 at 600 °C. The structural defects in Si implanted with He at 600 °C and then annealed at 1000 °C were investigated by transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HRTEM). The microstructure of an as-implanted sample is provided for comparison. After annealing, rod-like defects were diminished, while tangled dislocations and large dislocation loops appeared. Dislocation lines trapped by cavities were directly observed. The cavities remained stable except for a transition of shape, from octahedron to tetrakaidecahedron. Stacking-fault tetrahedrons were found simultaneously. Cavity growth was independent of dislocations. The evolution of observed lattice defects is discussed.

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Annealing ambient on the evolution of He-induced voids in silicon

Cited by 9 publications

References 25 publications

Evolution of the properties of helium nanobubbles during in situ annealing probed by spectrum imaging in the transmission electron microscope

Evolution of the properties of helium nanobubbles during in situ annealing probed by spectrum imaging in the transmission electron microscope

Vacancy-Type Defects Introduced by Gas Cluster Ion-Implantation on Si Studied by Monoenergetic Positron Beams

Microstructure Evolution in He-Implanted Si at 600 °C Followed by 1000 °C Annealing

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