T<sub>c</sub> of c-Axis-Oriented Y-Ba-Cu-O Films Prepared by CVD

Yamane, Hisanori; Kurosawa, Hideyuki; Iwasaki, H.; Masumoto, Hiroshi; Hirai, Toshio; Kobayashi, Norio; Muto, Yoshio

doi:10.1143/jjap.27.l1275

Cited by 63 publications

(11 citation statements)

References 8 publications

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“…The renucleation sequence consists of: (1) W deposition proceeds according to reaction [12]; (2) WF6 is switched off. Si deposits according to reaction [3]; (4) Sill4 is switched off. Si deposits according to reaction [3]; (4) Sill4 is switched off.…”

Section: Methodsmentioning

confidence: 99%

“…Sill4 --, Si + 2H~ [3] Although this reaction normally takes place at about 600~ the fresh W surface apparently catalyzes the decomposition of Sill4 (12) so that it readily decomposes at the temperature where reaction [2] takes place (400~ Flow and pressure setting during reactions [2] and [3] are: WF6 flow = 20 sccm, H~ flow = 1000 seem, Ar flow = 190 sccm, and total pressure = 1 torr; and Sill4 flow = 50 sccm, H2 flow = 1000 sccm, Ar flow = 190 sccm, and total pressure = 1 torr, respectively. In order to avoid reflection from the quartz window the reflectance is measured at near normal…”

Section: Methodsmentioning

confidence: 99%

See 1 more Smart Citation

Thermodynamic Analysis of Chemical Vapor Deposition of YBa2Cu3 O 7 − x from Different Halide Precursors

Ottosson¹,

Haårsta²,

Carlsson

1991

J. Electrochem. Soc.

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Chemical vapor deposition (CVD) of the superconducting YBa2Cu307 = phase from the halide precursors YX:~, BaX2 and CuX, where X = C1 or I, was thermodynamically investigated. The oxygen source was O2, H20, or a mixture of 02 + HzO. The effect of different deposition parameters on the yield of the YBa2Cu:~OT_ ~ phase was studied and the results are summarized in calculated CVD stability diagrams. The choice of metal halide was found to affect the phase stability of YBa2Cu307 = to a large extent. The best conditions were obtained by using exclusively iodides as metal precursors and with O2 as the oxygen source. For a total pressure of 10 kPa, YBa2Cu~O~_~. can be deposited with 100% yield fi)r all values of the [O2]/([YI3] + [BaI2] + [CuI]) molar ratio between 10 ~ and 10 ~, if the temperature is below 900~ If chlorides are used as metal precursors, the presence of H20 is found to be necessary in order to deposit the superconducting phase.Since the discovery of the new oxide high-Tr superconductors, various techniques have been employed to prepare superconducting films. One of the most attractive methods is chemical vapor deposition (CVD). The CVD technique oilers several advantages; control of the oxygen activity during growth, deposition of extremely dense material, control of microstructure and texture, and in situ growth of superconducting films can be obtained. The most common precursors in CVD of these superconductors are different metal chelates. Such precursors have been used to deposit thin films of the superconducting phases in the Y-Ba-Cu-O system [see e.g., (1-5)], the Bi-Sr-Ca-Cu-O system [see e.g., (6-8)], and the T1-Ba-Ca-Cu-O system (9, 10). A disadvantage with using metal chelates is the risk for carbonate formation in the grain boundaries, which also has been observed (5). Carbonate formation can be prevented by using metal halides as source materials. Only two investigations exist where the superconducting phase has been deposited from the respective metal halides, viz., in the Y-Ba-Cu-O system (11) and in the Bi-Sr-Ca-Cu-O system (12). In both studies a mixture of chlorides and iodides was used, YCI:, + BaI2 * CuC1 for the YBa2Cu307 = phase and BiC13 q SrI., + CuI for the superconducting phase in the Bi-Sr-Ca-Cu-O system. Furthermore, both studies employed a mixture of O., and H20 as the oxygen source. Typical deposition temperatures were 870-910~ in the Y-Ba-Cu-O system and 800-850~ in the Bi-Sr-Ca-Cu-O system.A thermodynamic investigation of CVD of YBa2Cu3OT. x from the metal precursors YCI3, BaI=, and CuC1 was recently presented (13). The results were found to agree well with the experimental findings (11). The presence of both H20 and O2 was required to deposit the YBa2Cu:~OT_ ~. phase and rather high values of the oxygen source vapor concentration to metal source vapor concentration ratio were found to be necessary. In the present paper, CVD of the superconducting YBa.,Cu30.~_x phase from different halide precursors was thermodynamically investigated. Two different and extreme conditions wer...

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Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Thermodynamic Analysis of Chemical Vapor Deposition of YBa2Cu3 O 7 − x from Different Halide Precursors

Ottosson¹,

Haårsta²,

Carlsson

1991

J. Electrochem. Soc.

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“…Berry et al used /3-diketonate complexes of Sr, Ca. In a subsequent sub-mission, Yamane et al reported the CVD growth of mixed phase Bi-22112/2223 on MgO (100) using identical precursors and substrate temperatures of 770-850°C [218]. The\e precursor films were then subjected to a post-anneal in oxygen at 884-890°C for 10 min thereby forming the Bi-2212 phase with = 80 K .…”

Section: Cvd Of Bsccomentioning

confidence: 99%

Superconducting Materials

and¹,

Marks²

1996

CVD of Nonmetals

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“…The number of published reports that describe the use of acac compounds for the deposition of metal oxides has increased tremendously in the last few years; most of these publications involve the use of acac complexes as sources for the deposition of high temperature superconductors. Studies directed toward the deposition of YBa 2 Cu 3 O 7 [140][141][142][143][144][145][146][147][148][149][150][151] and the bismuth-containing superconductors [152][153][154] have recently appeared; plasma-enhanced CVD studies have also been carried out [155,156]. One advantage of the MOCVD technique is that c-axis oriented films can be laid down that can carry high critical currents.…”

Section: Metal Oxidesmentioning

confidence: 99%

Low Temperature MoCVD Routes to Thin Films from Transition Metal Precursors

Girolami

Gozum

1989

MRS Proc.

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A review is presented of early and recent advances in the metal-organic chemical vapor deposition (MOCVD) of thin films from organotransition metal and related precursors. Routes to pure metals and alloys, metal carbides, metal borides, metal nitrides, metal silicides, and related materials will be summarized. Also included is a discussion of both the advantages and disadvantages of employing metal-organic precursors that contain transition elements.

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T_c of c-Axis-Oriented Y-Ba-Cu-O Films Prepared by CVD

Cited by 63 publications

References 8 publications

Thermodynamic Analysis of Chemical Vapor Deposition of YBa2Cu3 O 7 − x from Different Halide Precursors

Thermodynamic Analysis of Chemical Vapor Deposition of YBa2Cu3 O 7 − x from Different Halide Precursors

Superconducting Materials

Low Temperature MoCVD Routes to Thin Films from Transition Metal Precursors

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Tc of c-Axis-Oriented Y-Ba-Cu-O Films Prepared by CVD

Cited by 63 publications

References 8 publications

Thermodynamic Analysis of Chemical Vapor Deposition of YBa2Cu3 O 7 − x from Different Halide Precursors

Thermodynamic Analysis of Chemical Vapor Deposition of YBa2Cu3 O 7 − x from Different Halide Precursors

Superconducting Materials

Low Temperature MoCVD Routes to Thin Films from Transition Metal Precursors

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Product

Resources

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T_c of c-Axis-Oriented Y-Ba-Cu-O Films Prepared by CVD