The deposition of MoS 2 and TiS 2 thin films from the metal-organic precursors Mo(S-t-Bu) 4 and Ti(S-t-Bu) 4 has been investigated. Stoichiometric films with low levels of oxygen and carbon contaminants can be grown at temperatures between 110 and 350 °C and low pressure. The films are amorphous when grown at these low temperatures and have granular morphologies in which the grains are 30-90 nm in diameter, the larger grain sizes being observed at higher deposition temperatures. For the MoS 2 deposits, the electrical conductivity was ∼1 Ω -1 cm -1 . For both precursors, the organic byproducts generated during deposition consist principally of isobutylene and tert-butylthiol; smaller amounts of hydrogen sulfide, isobutane, di-tert-butyl sulfide, and di-tert-butyl disulfide are also generated. A β-hydrogen abstraction/proton-transfer mechanism accounts for the distributions of the organic byproducts seen during the deposition of MoS 2 and TiS 2 films. Our results differ in some respects from those of a previous study of the deposition of thin films from the titanium thiolate precursor.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.