The air‐stable, highly volatile precursor bis[di(2,2,2‐trifluoroethyl) dithiocarbamato]copper(II) (see Figure) has been fully characterized by single‐crystal XRD and thermogravimetric analysis, and shown to be a highly effective single‐source precursor for the deposition of high‐quality p‐type cuprous sulfide films by MOCVD. As‐deposited films are phase‐pure and polycrystalline, as indicated by XRD and X‐ray photoelectron spectroscopy.