Atomic Layer Epitaxy Growth of BaS and BaS:Ce Thin Films from In Situ Synthesized Ba(thd)<sub>2</sub>

Saanila, Ville; Ihanus, Jarkko; Ritala, Mikko; Leskelä, Markku

doi:10.1002/(sici)1521-3862(199812)04:06<227::aid-cvde227>3.0.co;2-n

Cited by 10 publications

(3 citation statements)

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“…For example, neutral ancillary ligands, such as glymes, can be used to help fill the coordination sphere if the anionic ligands themselves are not sufficiently saturating . The majority of barium complexes that have been explored as thin-film precursors are diketonates or ketoiminates, − and often these ligands have been functionalized with flexible donor pendants that can occupy additional coordination sites around the metal. ,− Other barium precursors that have been used for thin-film growth include those that utilize alkoxide cyclopentadienyl, − and (pyrazolyl)borate ligands. − …”

Section: Introductionmentioning

confidence: 99%

Synthesis and Structural Diversity of Barium (N,N-Dimethylamino)diboranates

et al. 2012

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The reaction of a slurry of BaBr(2) in a minimal amount of tetrahydrofuran (THF) with 2 equiv of Na(H(3)BNMe(2)BH(3)) in diethyl ether followed by crystallization from diethyl ether at -20 °C yields crystals of Ba(H(3)BNMe(2)BH(3))(2)(Et(2)O)(2) (1). Drying 1 at room temperature under vacuum gives the partially desolvated analogue Ba(H(3)BNMe(2)BH(3))(2)(Et(2)O)(x) (1') as a free-flowing white solid, where the value of x varies from <0.1 to about 0.4 depending on whether desolvation is carried out with or without heating. The reaction of 1 or 1' with Lewis bases that bind more strongly to barium than diethyl ether results in the formation of new complexes Ba(H(3)BNMe(2)BH(3))(2)(L), where L = 1,2-dimethoxyethane (2), N,N,N',N'-tetramethylethylenediamine (3), 12-crown-4 (4), 18-crown-6 (5), N,N,N',N'-tetraethylethylenediamine (6), and N,N,N',N",N"-pentamethylethylenetriamine (7). Recrystallization of 4 and 5 from THF affords the related compounds Ba(H(3)BNMe(2)BH(3))(2)(12-crown-4)(THF)·THF (4') and Ba(H(3)BNMe(2)BH(3))(2)(18-crown-6)·2THF (5'). In addition, the reaction of BaBr(2) with 2 equiv of Na(H(3)BNMe(2)BH(3)) in the presence of diglyme yields Ba(H(3)BNMe(2)BH(3))(2)(diglyme)(2) (8), and the reaction of 1 with 15-crown-5 affords the diadduct [Ba(15-crown-5)(2)][H(3)BNMe(2)BH(3)](2) (9). Finally, the reaction of BaBr(2) with Na(H(3)BNMe(2)BH(3)) in THF, followed by the addition of 12-crown-4, affords the unusual salt [Na(12-crown-4)(2)][Ba(H(3)BNMe(2)BH(3))(3)(THF)(2)] (10). All of these complexes have been characterized by IR and (1)H and (11)B NMR spectroscopy, and the structures of compounds 1-3, 4', 5', and 6-10 have been determined by single-crystal X-ray diffraction. As the steric demand of the Lewis bases increases, the structure changes from polymers to dimers to monomers and then to charge-separated species. Despite the fact that several of the barium complexes are monomeric in the solid state, none is appreciably volatile up to 200 °C at 10(-2) Torr.

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Section: Introductionmentioning

confidence: 99%

Synthesis and Structural Diversity of Barium (N,N-Dimethylamino)diboranates

et al. 2012

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“…Comparison to Other ALD Studies on SrS and BaS Films. SrS and BaS thin films have been deposited earlier by ALD using [Sr(thd) 2 ] x and [Ba(thd) 2 ] x as Sr and Ba sources, respectively. ,,− The as-deposited films have been polycrystalline-like in this study. The lowest growth temperatures for SrS and BaS have been 300 and 275 °C, as compared with 120 and 180 °C in the current work, respectively.…”

Section: Resultsmentioning

confidence: 99%

“…Alkaline earth metal sulfide thin films have received a lot of attention in recent years as host materials for luminescent layers in thin film electroluminescent devices, and particularly SrS:Ce and SrS:Cu are considered as blue-emitting phosphors. , These films can be prepared by different methods such as chemical vapor deposition (CVD), electron beam evaporation (EBE), molecular beam epitaxy (MBE), multisource deposition, reactive evaporation, sputtering, and atomic layer deposition (ALD), , which is also known as atomic layer epitaxy (ALE). − ALD is a special modification of CVD, based on alternately pulsed precursors that react on the substrates through self-limiting surface reactions. Both ALD and CVD methods need stable and volatile precursors and in practice the choice of alkaline earth metal precursors has been limited to β-diketonates and their adduct derivatives …”

Section: Introductionmentioning

confidence: 99%

Atomic Layer Deposition of SrS and BaS Thin Films Using Cyclopentadienyl Precursors

et al. 2002

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SrS and BaS thin films were grown on glass substrates using an atomic layer deposition (ALD) technique and (C5 i Pr3H2)2Sr(THF) (1), (C5Me5)2Sr(THF) x (2), (C5Me5)2Ba(THF) x (3), and H2S as precursors. Deposition temperatures were 120−460, 155−400, and 180−400 °C with 1, 2, and 3, respectively. Growth rate of the films varied between 0.6 and 3.0 Å/cycle and all the films were polycrystalline as deposited. The amount of C, H, and O residues was found to be 0.1−0.6 at. % in the films grown at 300 °C as determined by time-of-flight elastic recoil detection analysis (TOF-ERDA). Growth mechanisms for the films grown at different temperatures were also proposed. Crystal structures of 2 and 3 were determined.

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Metallic Materials Deposition: Metal‐Organic PrecursorsBased in part on the article Metallic Materials Deposition: Metal–Organic Precursors by Herbert D. Kaesz, Alfred Zinn, & Lutz Brandt which appeared in theEncyclopedia of Inorganic Chemistry, First Edition.

Winter

Zheng

El‐Kaderi

2005

Encyclopedia of Inorganic Chemistry

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This review describes metal‐organic precursors for the growth of metal‐containing thin films by chemical vapor deposition methods. The major emphasis is on precursors that have been reported since 1994, and corresponds to a time of major growth in this field. Progress in the development of metal‐organic precursors is documented for the main group, lanthanide, and group 4–11 elements. In the main group elements, there has been considerable research activity directed toward the identification of strontium and barium precursors, due both to the technological importance of mixed oxide phases and the inherent difficulties in obtaining volatile, complexes of these large metal ions. Aluminum, gallium, and indium have also been the subject of intense investigation, owing to the importance of many phases containing these elements. The group 4 and 5 elements titanium, zirconium, hafnium, niobium, and tantalum have been the subject of considerable precursor development activity, owing to the importance of several mixed oxide phases and the importance of zirconium and hafnium oxide for high permittivity gate materials in microelectronics devices. Growth of metal nitride films of these elements has also been an active area of research for use as barrier materials in microelectronics devices. The deposition of copper metal films from metal‐organic precursors is driven by the urgent need for copper metallization procedures in microelectronics device manufacturing. The current state of metal‐organic precursor development is presented for each of the other metallic elements.

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Atomic Layer Epitaxy Growth of BaS and BaS:Ce Thin Films from In Situ Synthesized Ba(thd)₂

Cited by 10 publications

References 34 publications

Synthesis and Structural Diversity of Barium (N,N-Dimethylamino)diboranates

Synthesis and Structural Diversity of Barium (N,N-Dimethylamino)diboranates

Atomic Layer Deposition of SrS and BaS Thin Films Using Cyclopentadienyl Precursors

Metallic Materials Deposition: Metal‐Organic PrecursorsBased in part on the article Metallic Materials Deposition: Metal–Organic Precursors by Herbert D. Kaesz, Alfred Zinn, & Lutz Brandt which appeared in theEncyclopedia of Inorganic Chemistry, First Edition.

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Atomic Layer Epitaxy Growth of BaS and BaS:Ce Thin Films from In Situ Synthesized Ba(thd)2

Cited by 10 publications

References 34 publications

Synthesis and Structural Diversity of Barium (N,N-Dimethylamino)diboranates

Synthesis and Structural Diversity of Barium (N,N-Dimethylamino)diboranates

Atomic Layer Deposition of SrS and BaS Thin Films Using Cyclopentadienyl Precursors

Metallic Materials Deposition: Metal‐Organic PrecursorsBased in part on the article Metallic Materials Deposition: Metal–Organic Precursors by Herbert D. Kaesz, Alfred Zinn, & Lutz Brandt which appeared in theEncyclopedia of Inorganic Chemistry, First Edition.

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Atomic Layer Epitaxy Growth of BaS and BaS:Ce Thin Films from In Situ Synthesized Ba(thd)₂