Synthesis of ZnO-based nanostructures for heterostructure photovoltaic cells

Lashkova, N A; Maximov, A. I.; Ryabko, A. A.; Bobkov, A. A.; Мошников, В. А.; Теруков, Е. И.

doi:10.1134/s106378261609013x

Cited by 30 publications

(6 citation statements)

References 22 publications

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“…To grow ZnO NRs layer over the chip we followed a few-step process according to hydrothermal technology (Figure 1) in frames of earlier established protocols [53,54]. All the chemicals used for synthesis were supplied at high purity grade (Vekton).…”

Section: Methodsmentioning

confidence: 99%

The Multisensor Array Based on Grown-On-Chip Zinc Oxide Nanorod Network for Selective Discrimination of Alcohol Vapors at Sub-ppm Range

Bobkov

Varezhnikov

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et al. 2019

Sensors

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We discuss the fabrication of gas-analytical multisensor arrays based on ZnO nanorods grown via a hydrothermal route directly on a multielectrode chip. The protocol to deposit the nanorods over the chip includes the primary formation of ZnO nano-clusters over the surface and secondly the oxide hydrothermal growth in a solution that facilitates the appearance of ZnO nanorods in the high aspect ratio which comprise a network. We have tested the proof-of-concept prototype of the ZnO nanorod network-based chip heated up to 400 °C versus three alcohol vapors, ethanol, isopropanol and butanol, at approx. 0.2–5 ppm concentrations when mixed with dry air. The results indicate that the developed chip is highly sensitive to these analytes with a detection limit down to the sub-ppm range. Due to the pristine differences in ZnO nanorod network density the chip yields a vector signal which enables the discrimination of various alcohols at a reasonable degree via processing by linear discriminant analysis even at a sub-ppm concentration range suitable for practical applications.

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Section: Methodsmentioning

confidence: 99%

The Multisensor Array Based on Grown-On-Chip Zinc Oxide Nanorod Network for Selective Discrimination of Alcohol Vapors at Sub-ppm Range

Bobkov

Varezhnikov

Plugin

et al. 2019

Sensors

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“…Для изготовления пленок ZnO и их легирования примесями используются различные методы синтеза. Например, золь-гель технологии [6,7,8], спрей-пиролиз [9], лазерное импульсное осаждение [10], магнетронное распыление на переменном токе [11] и другие. Трехвалентный ион алюминия Al 3+ при замещении двухвалентного цинка Zn 2+ в кристаллической решетке ZnO будет вести себя как донорная примесь, что широко используется для изготовления прозрачных высокопроводящих слоев ZnO в прозрачной электронике [11] и солнечной энергетике [12].…”

Section: Introductionunclassified

Influence of Al impurities on the electrical properties of ZnO films

et al. 2019

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The paper presents the results of studies of the structure, electrical and optical properties of ZnO films with Al content from 1 to 5 at.% obtained by the method of ion-beam sputtering of a composite ceramic target in an argon atmosphere. The composite target is a rectangular ZnO ceramic plate with several bands of Al 2 O 3 corundum unevenly distributed over the ZnO surface. In one sputtering cycle, 10 samples were obtained with an aluminum concentration of 1 to 5 at.% as the results of the analysis of the energy dispersion of the second electrons. After deposition, ZnO films were partially crystallized and contained one phase of hexagonal wurtzite with increased parameters a and c. The grain size of the films was estimated using the Scherrer equation and showed a tendency for the grain sizes to change with increasing Al concentration in ZnO films. X-ray diffraction data were confirmed by studying the surface morphology using atomic force microscopy. Measurement of the electrical parameters of the films showed that the smallest resistivity (~ 4 ·10 −3 Ohm · cm) is observed in ZnO films with 1 at.% Al. As the Al concentration in ZnO increases, the resistivity of the films increases, reaching the value ρ = 250 Ohm · cm at 5 at.% Al. A possible model of the effect of Al impurity on the electrical properties of ZnO films is considered. Studies of the optical properties of the samples showed that all films are highly transparent (~ 70 ÷ 90%) in the visible light range. The interference bandwidths provide an estimate of the value of the refractive index of ZnO : Al films. From the light absorption spectra, the values of the band gap of ZnO : Al samples were determined and a slight increase in the band gap of ZnO : Al with an increase in the Al concentration in films was established. The mechanism of this behavior of Al impurity in ZnO is discussed. Possible areas of application for ZnO films with Al impurities are considered.1 Воронежский государственный технический университет, ул. 20-летия Октября, 84, Воронеж, 394006, Россия 2 Воронежский государственный университет, Университетская пл., 1, Воронеж, 394018, Россия В работе представлены результаты исследований структуры, электрических и оптических свойств пленок ZnO с содержанием Al от 1 до 5 ат.%, полученных методом ионно-лучевого распыления составной керамической мишени в атмосфере аргона. Составная мишень представляет собой прямоугольную керамическую пластину ZnO с несколькими полосами корунда Al 2 O 3 , неравномерно распределенными на поверхности ZnO. За один цикл напыления были получены 10 образцов с концентрацией алюминия от 1 до 5 ат.% по данным энергодисперсионного анализа вторичных электронов. Сразу после напыления пленки ZnO были частично кристаллизованы и содержат одну фазу гексагонального вюрцита с увеличенными параметрами а и с. Размер зерна пленок оценивался по формуле Шеррера и показал тенденцию к изменению размеров зерен по мере увеличения концентрации Al в пленках ZnO. Данные

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“…Nanostructures formation was carried out via mild hydrothermal synthesis [14][15][16][17] at the low temperature (Т=85°С) within 60 min. 25 mM hexamethylene tetramine was used as a weak alkali, while zinc nitrate equimolar solution Zn(NO 3 ) 2 was a Zn 2+ precursor.…”

Section: Methodsmentioning

confidence: 99%

Cys-modified zinc oxide 1D-nanostructures formation for gas sensors application

Semenova¹,

Yukhnovets²,

Maximov³

et al. 2018

EAI Endorsed Transactions on Energy Web

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In this work, the ZnO-based materials were synthesized for gas sensors applications. The nanostructures formation was carried out by mild hydrothermal synthesis with the variations in surfactant concentration. The qualitative and quantitative analysis of the surface states in ZnO nanocrystals was performed. The effect of surfactant (cysteine) adsorption on ZnO 1D-nanostructures growth and the distribution of acid-bade adsorption sites on nanostructures surface were investigated. The control of the nanorods aspect ratio (about 0.4 at cystein concentration of 5 mM/l) leads to the changes in the Zn 2+ /O 2ions proportion, emerging on the surface. High cysteine concentrations resulted in the formation of Brönsted acid and Lewis base adsorption sites.

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Synthesis of ZnO-based nanostructures for heterostructure photovoltaic cells

Cited by 30 publications

References 22 publications

The Multisensor Array Based on Grown-On-Chip Zinc Oxide Nanorod Network for Selective Discrimination of Alcohol Vapors at Sub-ppm Range

The Multisensor Array Based on Grown-On-Chip Zinc Oxide Nanorod Network for Selective Discrimination of Alcohol Vapors at Sub-ppm Range

Influence of Al impurities on the electrical properties of ZnO films

Cys-modified zinc oxide 1D-nanostructures formation for gas sensors application

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