Influence of Al impurities on the electrical properties  of ZnO films

Rembeza, S. I.; Prosvetov, Roman; Rembeza, E. S.; Vinokurov, A. V.; Makagonov, V. A.; Agapov, B. L.

doi:10.22226/2410-3535-2019-3-288-293

Cited by 2 publications

(2 citation statements)

References 20 publications

(30 reference statements)

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“…In the case of single-doped ZnO films with Al, the peak was substantially suppressed and broadened with the increase in the doping level, which indicates a significant deterioration in the crystalline quality of the ZnO host under Al doping. This phenomenon agrees well with the results of previous works [ 33 , 34 , 35 ], in which it was noted that increasing the doping content above 1 at.% may result in interstitial positioning of Al atoms as well as the formation of oxide compounds into the noncrystalline region in the grain boundaries. At the same time, in the case of doping ZnO with gallium, with an increase in the doping level to 2 at.%, the XRD peak intensity became slightly higher than those of the pure ZnO film.…”

Section: Resultssupporting

confidence: 93%

On the Effect of the Co-Introduction of Al and Ga Impurities on the Electrical Performance of Transparent Conductive ZnO-Based Thin Films

Асваров

Abduev²,

Akhmedov

et al. 2022

Materials

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In this study, a set of ZnO-based thin films were prepared on glass substrates at various substrate temperatures via the direct current magnetron sputtering of ceramic targets with the following compositions: pure ZnO, Al-doped ZnO with doping levels of 1 and 2 at.%, Ga-doped ZnO with doping levels of 1 and 2 at.%, and (Al, Ga)-co-doped ZnO with doping levels of 1 and 2 at.% for each impurity metal. The dependencies of sheet resistance, carrier concentration, and Hall mobility on the substrate temperature were studied for the deposited films. The results of evaluating the electrical performances of the films were compared with the data of their XRD study. According to the XRD data, among all the deposited ZnO films, the maximum crystallinity was found in the co-doped thin film with doping levels of 2 at.% for each impurity metal, deposited at a substrate temperature of 300 °C. It was revealed that the observed increase in the Hall mobility and carrier concentration for the co-doped films may, in particular, be due to the difference in the preferred localization of Ga and Al impurities in the ZnO film: the Ga ions were mainly incorporated into the crystal lattice of ZnO nanocrystallites, while the Al impurity was mostly localized in the intercrystalline space at the grain boundaries.

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Section: Resultssupporting

confidence: 93%

On the Effect of the Co-Introduction of Al and Ga Impurities on the Electrical Performance of Transparent Conductive ZnO-Based Thin Films

Асваров

Abduev²,

Akhmedov

et al. 2022

Materials

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“…Для металлической сплавной мишени размером 28 × 8 см 2 использовалось олово чистотой 99.98, а для составной мишени были взяты 5 полосок кварца шириной 9 мм и толщиной 2 мм. Кварцевые полоски закреплялись на поверхности оловянной мишени с переменным шагом [8].…”

Section: образцы и методика экспериментаunclassified

Influence of silicon impurity on the structure and physical properties of Sn-Si-O films

et al. 2020

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Silicon-doped tin dioxide (Sn-Si-O) films were prepared by HF reactive ion-beam sputtering of a composite tin metal target in a controlled atmosphere of Ar and O 2. The use of a tin metal target with nonuniformly distributed quartz inserts made it possible to prepare a set of samples with a silicon impurity content of 0.5 to 4 at.% in one sputtering process. The elemental composition of the samples was determined, phase analysis was performed, and the dependence of the surface morphology of SnO 2 on the content of silicon impurities was established. It has been shown that an increase in the Si concentration in the Sn-Si-O samples leads to a decrease in the grain size of polycrystals down to a value of about 5 nm, which is confirmed by the data of XRD and high-resolution transmission electron microscopy (HRTEM). The effect of a silicon impurity in SnO 2 films on the optical properties of the films and the band gap, as well as on the concentration and mobility of charge carriers, has been studied. The films have a high transparency coefficient (over 70 %) in the visible region of the spectrum. The light transmission threshold lies in the region of 300-400 nm. When measuring the gas sensitivity of doped SnO 2 films, the influence of the grain size on the gas sensor properties of the films was established and a size effect was found, which consists in a decrease in the temperature of the maximum gas sensitivity of the films with a decrease in the grain size and with an increase in the ratio of the number of atoms on the grain surface to their number in the bulk. Silicon doping of SnO 2 films allows one to control the grain size of polycrystals and improve the metrological parameters of gas sensor elements based on SnO 2 .

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Influence of Al impurities on the electrical properties of ZnO films

Cited by 2 publications

References 20 publications

On the Effect of the Co-Introduction of Al and Ga Impurities on the Electrical Performance of Transparent Conductive ZnO-Based Thin Films

On the Effect of the Co-Introduction of Al and Ga Impurities on the Electrical Performance of Transparent Conductive ZnO-Based Thin Films

Influence of silicon impurity on the structure and physical properties of Sn-Si-O films

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