Synthesis of 3C-silicon carbide 1D structures by carbothermal reduction process

Preparation of hollow SiC spheres by combustion synthesis

“…According to the point element analysis in Figure 4A and the previous XRD results, the accumulated particles composing the microspheres in sample S3-1 should be β-SiC, and each β-SiC particle has a regular hexagonal structure, which grows singly along the (111) direction with obvious stacking faults. 28,29 As samples S5-1 to-S9-1 have the same features, taking sample S5-1 as an example, it can be observed from Figure 4B that the smooth surface is mainly Si, and the "inlaid" particles are mainly β-SiC.…”

“…Moreover, β‐SiC microcrystals ( d = 0.255 nm) were synthesized in sample S1‐1, which grew along the (111) direction with the lowest surface energy. 28,29 …”

“…27 Moreover, β-SiC microcrystals (d = 0.255 nm) were synthesized in sample S1-1, which grew along the (111) direction with the lowest surface energy. 28,29 In order to further determine the optimum M Si/(C2F4) for the synthesis of HSS, the surface and interior of the spheres were characterized in detail. According to the point element analysis in Figure 4A and the previous XRD results, the accumulated particles composing the microspheres in sample S3-1 should be β-SiC, and each β-SiC particle has a regular hexagonal structure, which grows singly along the (111) direction with obvious stacking faults.…”

Rapid Synthesis of Patterned Silicon Carbide Coatings Using Laser‐Induced Pyrolysis and Crystallization of Polycarbosilane

“…SiC is most commonly produced via three routes: chemical vapor deposition (CVD), [ 12 ] reaction between carbon and silicon precursor, [ 13,14 ] and pyrolysis of preceramic polymers (PCPs). [ 15,16 ] CVD produces low‐defect SiC, but the method is expensive and not easily scalable.…”

“…Silicon carbide (SiC) is an essential material with extraordinary characteristics such as high thermal stability, chemical inertness, corrosion resistance, and semiconducting behavior. [1,2] These properties have allowed for the use of SiC in oxidation and corrosion-resistant coatings, [3,4] transistors for harsh environments, [5] field emitters, [6] catalyst supports, [7] sensors, [8] membranes, [9] and photocatalysis, among others [10,11] SiC is most commonly produced via three routes: chemical vapor deposition (CVD), [12] reaction between carbon and silicon precursor, [13,14] and pyrolysis of preceramic polymers (PCPs). [15,16] CVD produces lowdefect SiC, but the method is expensive and not easily scalable.…”