Synthesis of large-scale SiC@SiO2 nanowires with good optical properties by using Si@SiO2 as silicon source

Synthesis of 3C/2H/6H heterojunction SiC nanowires with high-performance supercapacitors by thermal evaporation

“…Therefore, the prepared SiC NWs contained a mixture of cubic (3C) and hexagonal (2H, 6H) structures. According to the analysis of the microstructure and previous studies, 40,66 the structure of SiC NWs along the axial direction was reshaped, as shown schematically in Fig. 6f, in which the red, green, and blue dots correspond to 3C-SiC, 2H-SiC, and 6H-SiC, respectively.…”

“…The thermal evaporation method has the advantages of high-level adjustability, safety, and product purity, which facilitates the acquisition of large quantities of high-purity SiC NWs. 37–40 The structure of the resulting SiC NWs can be tuned by changing the temperature and raw materials (such as silicon and carbon sources). 41–45 The SiC crystal structure would change from high symmetry (cubic structure, 3C) to low symmetry (hexagonal structure, e.g.…”

High-Yield Synthesis of SiC@SiO2 Core–Shell Nanowires on Graphite Substrates for Energy Applications

“…Furthermore, Si source can be derived from various materials, either individually or in combination, such as photovoltaic waste, quartz sand, SiO 2 powders, and rice husk ash. ,, Among these Si-based materials, the amorphous SiO 2 stands out as an ideal choice due to its high reactivity, cost-effectiveness, and favorable safety characteristics. , Liu et al reported that the amorphous SiO 2 could significantly reduce the activation energy required for the reaction during the growth of NWs . In our previous study, Si powders with a highly chemically active SiO 2 coating on the surface (denoted as Si@SiO 2 ) were first prepared by preoxidation, and then a significant quantity of high purity (>95%) SiC@SiO 2 NWs were synthesized on graphite substrates, with the products showing good photoluminescence (PL) properties . The growth of NWs is greatly influenced by the morphology and content of SiO 2 on the surface of the Si powders.…”

“…19 In our previous study, Si powders with a highly chemically active SiO 2 coating on the surface (denoted as Si@SiO 2 ) were first prepared by preoxidation, and then a significant quantity of high purity (>95%) SiC@SiO 2 NWs were synthesized on graphite substrates, with the products showing good photoluminescence (PL) properties. 26 The growth of NWs is greatly influenced by the morphology and content of SiO 2 on the surface of the Si powders. The content and morphology of the SiO 2 coats could be regulated by changing the preoxidation time.…”

“…Due to the unsaturated chemical bonding and the presence of gas flow, the SiO gas could be easily adsorbed on the graphite surface. 26 The SiO gas will react with the active carbon atoms to form SiC nuclei. 64 Under continuous supplementation of SiO gas, it will react with CO to form SiC nuclei, which are deposited on the SiC(111) plane due to the least-energy principle, leading to SiC@SiO 2 NWs along the SiC [111] direction.…”