2016
DOI: 10.1007/s11664-016-4388-6
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Synthesis and Microwave Dielectric Properties of A16V18O61 (A = Ba, Sr and Ca) Ceramics for LTCC Applications

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Cited by 20 publications
(2 citation statements)
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“…There is a renewed interest in vanadium‐based materials owing to their low sintering temperature, good stability, compatibility with metal electrodes etc. Several vanadium based ceramic systems were reported for LTCC applications, such as Ca 5 Co 4 (VO 4 ) 6 , Ba 16 V 18 O 61 , BaTa 2 V 2 O 11 , LiCa 3 ZnV 3 O 12 , LiMgVO 4 , BiVO 4 , 0.45BiVO 4 ‐0.55TiO 2 , Ba 3 (Ti,Zr)V 4 O 15 , Ca 5 Mn 4 (VO 4 ) 6 , Mg 4 V 2 O 9 , BaMg 2 V 2 O 8 etc., . X Jiang et al reported that orthorhombic BaCaV 2 O 7 ceramic sintered at 830 °C shows good microwave dielectric properties with dielectric constant of 8.9, quality factor of 31,362 GHz and temperature coefficient of resonant frequency of –68.2 ppm/°C .…”
Section: Introductionmentioning
confidence: 99%
“…There is a renewed interest in vanadium‐based materials owing to their low sintering temperature, good stability, compatibility with metal electrodes etc. Several vanadium based ceramic systems were reported for LTCC applications, such as Ca 5 Co 4 (VO 4 ) 6 , Ba 16 V 18 O 61 , BaTa 2 V 2 O 11 , LiCa 3 ZnV 3 O 12 , LiMgVO 4 , BiVO 4 , 0.45BiVO 4 ‐0.55TiO 2 , Ba 3 (Ti,Zr)V 4 O 15 , Ca 5 Mn 4 (VO 4 ) 6 , Mg 4 V 2 O 9 , BaMg 2 V 2 O 8 etc., . X Jiang et al reported that orthorhombic BaCaV 2 O 7 ceramic sintered at 830 °C shows good microwave dielectric properties with dielectric constant of 8.9, quality factor of 31,362 GHz and temperature coefficient of resonant frequency of –68.2 ppm/°C .…”
Section: Introductionmentioning
confidence: 99%
“…[1][2][3][4][5] The low dielectric loss characteristics of the LTCC make it an excellent choice for high-frequency applications and enable circuits and devices that are more efficient. [6][7][8][9][10][11][12][13][14][15] These materials should have low permittivity (ε r < 10), low dielectric loss (tan δ ∼ 10 −3 ), and a low-temperature dependence of resonant frequency (TCf < 20 ppm=°C). 3,[16][17][18] This is because the low relative permittivity increases the signal speed, 3,[19][20][21][22][23] and the low dielectric loss minimizes the insertion loss and enables highly selective circuits and applications.…”
Section: Introductionmentioning
confidence: 99%