A new glass-free low temperature sinterable CuMoO 4 ceramic was prepared by a solid state ceramic route. The structural, microstructural, electron dispersive spectrum, and X-ray photoelectron spectroscopy analysis revealed the quality of the material synthesized. The CuMoO 4 ceramic sintered at 650 °C exhibits densification of 96% and low coefficient of thermal expansion (CTE) of 4.6 ppm/°C in the temperature range of 25−500 °C. It has relative permittivity (ε r ) of 7.9, quality factor (Qf) of 53 000 GHz, and temperature coefficient of resonant frequency (τ f ) of −36 ppm/°C (25−85 °C) at 12.7 GHz. The sintered ceramic also shows ε r of 11 and low dielectric loss (tan δ) of 2.7 × 10 −4 at the frequency of 1 MHz. The full width half-maximum (fwhm) of A 1g Raman mode of CuMoO 4 ceramic at different sintering temperatures correlate well with the Qf values. The low sintering temperature, low relative permittivity, high-quality factor, and matching coefficient of thermal expansion to that of Si make CuMoO 4 a suitable candidate for ultralow temperature cofired ceramic (ULTCC) applications.

Herein, structure and dielectric properties of Sm(Nb1-xVx)O4 (SNV-x) (0.0 ≤ x ≤ 0.9) ceramics were studied by crystal structure Refinement, Raman, Transmission electron microscope (TEM), Far-infrared / THz reflectivity spectroscopy...

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Self assembly of PANI nano fibers with enhanced emi shielding.