Synthesis and characterization of pure and graphene (Gr)-doped organic/polymer nanocomposites to investigate the electrical and photoconductivity properties of Au/n-GaAs structures

Çіçek, Osman; Tan, Serhat Orkun; Tecimer, H.; Orak, İkram; Altındal, Ş.

doi:10.1016/j.compositesb.2017.01.012

Cited by 67 publications

(11 citation statements)

References 43 publications

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“…I ph (8) where P is the illumination power and A (=7.85x10 -3 cm 2 ) is the diode area [35][36][37][38][39]. Similar results were also found in recently by some researchers [40][41][42].…”

Section: R =supporting

confidence: 86%

Photoresponse properties of Au/(CoFe2O4-PVP)/n-Si/Au (MPS) diode

Ulusan¹,

Tataroğlu²,

Altındal³

et al. 2021

Preprint

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Photo-response properties of the Au/(CoFe2O4-PVP)/n-Si (MPS) diode were investigated using current-voltage (I-V) measurements achieved under dark and various illumination conditions. The experimental results showed that the MPS diode has a good response to the illumination. Especially, in reverse-bias region, photocurrent (Iph) increases with increasing illumination intensity (P) due to the formation of electron–hole pairs. The double-logarithmic Iph-P plot has a good relation with 1.27 slope and such high value of slope indicates a lower density of the unoccupied trap level. This indicates that the diode exhibits a good photoconductive and photovoltaic behavior. The photo-to-dark current ratio confirms the photo-sensitivity of the diode. Thermionic emission (TE) theory was used to determine the diode electronic parameters such as saturation current (I0), ideality factor (n) and barrier height (ΦB0) and their values were calculated from the measured I-V data. Moreover, the ΦB0 and series resistance (Rs) were extracted from an alternative method suggested by Norde. All these parameters (ΦB0, n, Rs, and I0) decrease with increasing illumination intensity and there is a good linear correlation between ΦB0 and n as ΦB0 (n) = 4.72x10− 2n + 0.5464 eV. As a results, the fabricated MPS diode due to the excellent photo-response can be used for photovoltaic applications.

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“…I ph (8) where P is the illumination power and A (=7.85x10 -3 cm 2 ) is the diode area [35][36][37][38][39]. Similar results were also found in recently by some researchers [40][41][42].…”

Section: R =supporting

confidence: 86%

Photoresponse properties of Au/(CoFe2O4-PVP)/n-Si/Au (MPS) diode

Ulusan¹,

Tataroğlu²,

Altındal³

et al. 2021

Preprint

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“…The downward curve in curvature region (non-ideal behaviour) of the forward bias I-V plots at a sufficiently huge voltage has an aspect to the presence of not statistically significant, which equilibrates with the semiconductor, apart from the Rs effect of non-aligned region in the Schottky barrier diode [51][52][53][54][55]. Likewise, the ideality factor, the barrier height, and the series resistance values have also been firmed by examination in the high current range where the I-V characteristic is not linear.…”

Section: Fabrication Of Metal Polymer Semiconductor (Mps) Diodesmentioning

confidence: 99%

Synthesis of Metal-Polymer-Semiconductor Diode Using Polyaniline by Chemical Oxidative Method and its Temperature Dependent Electrical Conductivity Behaviour

Shoba¹,

N.Pasupathy²,

Thirunavukkarasu

et al. 2019

Asian J. Chem.

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The interfacial layer of pristine polyaniline (PANI) polymer was prepared using chemical oxidative method with 0.2 M concentration formerly, aniline hydrochloride was oxidized with ammonium peroxydisulfate 0.25 M in aqueous medium at 1-2 ºC next to aniline, stirring time and polymerization temperature are considerable causing parameters of polymerization reaction, harmoniously metal polymer- semiconductor (MPS) constructions of Cu/PANI/n-Si Schottky barrier diodes with different acids (HCl, acetic acid, nitric acid and sulfuric acid) was fabricated. The structural analyses of XRD sizes of the elements revealed that the crystal structure of distortion and converted into amorphous nature and SEM revealed that the morphology of pristine PANI powders. The FT-IR spectra confirmed that ammonium peroxydisulfate with pristine PANI along with band formation. The optical property of PANI was analyzed using UV-vis spectra and deliberate with minimum band gap 3.1 eV by means of HCl. The electrical property I -V temperature ranges 30 to 120 ºC represents that the maximum average conductivity obtains as 0.70 × 10-2 S/cm for 0.2 M HCl. The lowest ideality factor (n) and minimum barrier height (ΦB) values were achieved for HCl of Cu/PANI/n-Si Schottky barrier diode (SBDs) under the explanation disorder.

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“…Nevertheless, the quest for new interlayer materials still continues for purposes such as surface passivation, barrier height modification, leakage current minimization, and so on. Therefore, recently, some researchers focus on improvement of the performance or quality of these devices especially by using polymeric interlayer materials due to their high surface area to volume rate, low cost, low weight, good mechanical strength, charge storage capacity, flexibility, high dielectric strength, and their suitability to easy preparation methods such as electrospinning, solid–liquid phase separation, and template synthesis . Owing to these unique properties of polymeric materials, metal–polymer–semiconductor (MPS) structures have become an attractive research topic for physicists, chemists, and electrical and electronics engineers as well.…”

Section: Introductionmentioning

confidence: 99%

“…Polymers that are fabricated with electrospinning method comprise the large part of studies in the literature. In the last decade, there has been a growing interest toward electronic devices such as Schottky barrier diodes that are comprised of electrospun polymeric layer as well as other applications such as blood filtration, wound dressing, oil–water separation and alike …”

Section: Introductionmentioning

confidence: 99%

Distribution of interface traps in Au/2% GC‐doped Ca₃Co₄Ga_0.001O_x/n‐Si structures

Eroğlu

Yıldırım

Durmuş

et al. 2019

J of Applied Polymer Sci

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This study presents voltage‐dependent profile of interface traps in Au/n‐Si structure with 2% graphene–cobalt‐doped Ca3Co4Ga0.001Ox interfacial layer. Admittance measurements revealed capacitance‐voltage (C‐V) plots with typical regions of a metal–insulator–semiconductor structure through inversion, depletion, and accumulation regions. Frequency dispersion is observed in C‐V plots and such behavior was explained with excess capacitance, which is associated with the density of interface traps (Dit) in the structure because larger Dit is observed when the measurements are held at low frequencies due to the fact that traps can follow the signal depending on their lifetime. Dit was also obtained using conductance method, which also provided lifetime of the traps. The difference between the values of Dit was attributed to the difference in extraction methods. Obtained results showed that Au/2% graphene–cobalt‐doped Ca3Co4Ga0.001Ox/n‐Si structure yields promising electrical characteristics when the structure is operated at high frequencies. © 2019 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2020, 137, 48399.

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Synthesis and characterization of pure and graphene (Gr)-doped organic/polymer nanocomposites to investigate the electrical and photoconductivity properties of Au/n-GaAs structures

Cited by 67 publications

References 43 publications

Photoresponse properties of Au/(CoFe2O4-PVP)/n-Si/Au (MPS) diode

Photoresponse properties of Au/(CoFe2O4-PVP)/n-Si/Au (MPS) diode

Synthesis of Metal-Polymer-Semiconductor Diode Using Polyaniline by Chemical Oxidative Method and its Temperature Dependent Electrical Conductivity Behaviour

Distribution of interface traps in Au/2% GC‐doped Ca₃Co₄Ga_0.001O_x/n‐Si structures

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Synthesis and characterization of pure and graphene (Gr)-doped organic/polymer nanocomposites to investigate the electrical and photoconductivity properties of Au/n-GaAs structures

Cited by 67 publications

References 43 publications

Photoresponse properties of Au/(CoFe2O4-PVP)/n-Si/Au (MPS) diode

Photoresponse properties of Au/(CoFe2O4-PVP)/n-Si/Au (MPS) diode

Synthesis of Metal-Polymer-Semiconductor Diode Using Polyaniline by Chemical Oxidative Method and its Temperature Dependent Electrical Conductivity Behaviour

Distribution of interface traps in Au/2% GC‐doped Ca3Co4Ga0.001Ox/n‐Si structures

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Distribution of interface traps in Au/2% GC‐doped Ca₃Co₄Ga_0.001O_x/n‐Si structures