The n-type tungsten oxide (WO 3 ) polycrystalline thin films have been prepared at an optimized parameters (0.20M, 5 ml and 500 o C) using jet nebulizer spray pyrolysis (JNSP) technique. Such prepared WO 3 films were characterized by XRD, SEM, EDAX, UV-vis from I-V. The XRD pattern of the optimized WO 3 film reveals the monoclinic structure. The SEM and EDAX images shows that the surface morphological variations and elements present were confirmed. The optical properties were recorded by UV-vis spectrum and the maximum band gap value was observed as 3.86 eV for 500°C. The maximum conductivity of the prepared WO 3 was recorded as 1.201 x 10 -8 S/cm from I-V characterization for 500°C.Using J-V plot, the diode parameters of n-WO 3 /p-Si prepared at 500°C with 0.2 M and 5 ml were measured under dark and illumination. The ideality factor (n) and barrier height (Φ b ) values of n-WO 3 /p-Si diode are obtained as 5.8 and 0.80 eV in dark and 3.9 and 0.81 eV under illumination.
Nanocrystalline ITO thin films were deposited on glass substrates by a new spray pyrolysis route, Jet nebulizer spray (JNS) pyrolysis technique, for the first time at different substrate temperatures varying from 350 to 450°C using a precursor containing indium and tin solution with 90:10 at% concentration. The structural, optical and electrical properties have been investigated as a function of temperature. X-ray diffraction analysis showed that the deposited films were well crystallized and polycrystalline with cubic structure having (222) preferred orientation. The optical band gap values calculated from the transmittance spectra of all the ITO films showed a blue shift of the absorbance edge from 3.60 to 3.76 eV revealing the presence of nanocrystalline particles. AFM analysis showed uniform surface morphology with very low surface roughness values. XPS results showed the formation of ITO films with In 3? and Sn 4? states. TEM results showed the nanocrystalline nature with grain size about 12-15 nm and SAED pattern confirmed cubic structure of the ITO films. The electrical parameters like the resistivity, mobility and carrier concentration are found as 1.82 9 10 -3 X cm, 8.94 cm 2 /Vs and 4.72 9 10 20 cm -3 , respectively for ITO film deposited at 400°C. These results show that the ITO films, prepared using the new JNS pyrolysis technique, have the device quality optoelectronic properties when deposited under the proposed conditions at 400°C.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.