Abstract:Poly(ptrimethylsi1oxystyrene) (1 a), polyb-(tert-butyldimethylsiloxy)styrene] (1 b), poly[p-(tri-methylsi1oxy)-a-methylstyrene] (1 c), poly[p-(tert-butyldimethylsiloxy)-a-methylstyrene) (1 d) and polyfp-[2-(tert-butyldimethylsiloxy)ethyl]styrene] (1 e) were prepared by free-radical or cationic polymerization of the corresponding monomers. Poly([p-[2(trimethylsiloxy)ethyl]styrene]-co-[p-(2-hydroxyethyl)styrene]] (2 a) was synthetized by anionic polymerization of the corresponding trimethylsilylated monomer, fol… Show more
“…Poly(α,α-dimethylbenzyl methacrylate- co -methyl methacrylate) ( 7 ) ( m : n = 1:2 in Figure , = 2.30 × 10 4 and = 4.01 × 10 4 , T g = 94 °C) was donated by Toppan Printing Co., Ltd. Diphenyl(4-phenylthiophenyl)sulfonium hexafluoroantimonate ( 8 ) was a gift from Midori Kagaku Co., Ltd. and used after recrystallization from EtOH/ i PrOH = 95/5 (v/v). Poly[4-( tert -butoxycarbonyl)oxystyrene] ( 4 ), ( = 5.35 × 10 4 and = 9.06 × 10 4 , T g = 122 °C), poly(4-trimethylsiloxystyrene) ( 6 ), ( = 3.56 × 10 4 and = 5.92 × 10 4 , T g = 79 °C), and 1,2-diphenyl-2-hydroxy-3-tosyloxypropan-1-one (α-tosyloxymethylbenzoin) ( 9 ) were prepared according to the reported procedures. 1 t…”
In the presence of a small amount of acid, 3-phenyl-3,3-ethylenedioxy-1-propyl ptoluenesulfonate autocatalytically decomposed to give p-toluenesulfonic acid both in solution and in a polymer matrix. Such a reaction was successfully applied for the improvement of sensitivity of several positive-working chemical-amplification photoresists. It was revealed that the diffusion of the acid plays the most essential role in the sensitivity enhancement, by determining the addition effect of the acid amplifiers with various arenesulfonates on photosensitivity characteristics.
“…Poly(α,α-dimethylbenzyl methacrylate- co -methyl methacrylate) ( 7 ) ( m : n = 1:2 in Figure , = 2.30 × 10 4 and = 4.01 × 10 4 , T g = 94 °C) was donated by Toppan Printing Co., Ltd. Diphenyl(4-phenylthiophenyl)sulfonium hexafluoroantimonate ( 8 ) was a gift from Midori Kagaku Co., Ltd. and used after recrystallization from EtOH/ i PrOH = 95/5 (v/v). Poly[4-( tert -butoxycarbonyl)oxystyrene] ( 4 ), ( = 5.35 × 10 4 and = 9.06 × 10 4 , T g = 122 °C), poly(4-trimethylsiloxystyrene) ( 6 ), ( = 3.56 × 10 4 and = 5.92 × 10 4 , T g = 79 °C), and 1,2-diphenyl-2-hydroxy-3-tosyloxypropan-1-one (α-tosyloxymethylbenzoin) ( 9 ) were prepared according to the reported procedures. 1 t…”
In the presence of a small amount of acid, 3-phenyl-3,3-ethylenedioxy-1-propyl ptoluenesulfonate autocatalytically decomposed to give p-toluenesulfonic acid both in solution and in a polymer matrix. Such a reaction was successfully applied for the improvement of sensitivity of several positive-working chemical-amplification photoresists. It was revealed that the diffusion of the acid plays the most essential role in the sensitivity enhancement, by determining the addition effect of the acid amplifiers with various arenesulfonates on photosensitivity characteristics.
This paper describes a positive resist formulation containing silylated polystyrene polymer, made photosensitive at wavelengths from 220 to 310 nm by means of an onium salt sensitizer ((C6Hg)3SMXn) and at wavelengths from 360 to 450 nm by means of an onium salt and a dye photosensitizer (perylene). In the present study, we report the desilylation
Upon treatment with ultraviolet irradiation (wavelength A = 254 nm) the resist containing both poly@-trialkylsiloxystyrene) and a triarylsulfonium salt undergoes photoinduced structural modifications which convert the silylated polymer into either poly@-hydroxystyrene) or poly[@-trialkylsiloxystyrene)-co-~-hydroxystyrene)]. Aging with the use of antimonate salts rather than arsenate salts, and bulky alkyl groups favour 0-Si bond cleavage.
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