Synchrotron-radiation-induced deposition of boron and boron carbide films from boranes and carboranes: Decaborane

Abstract

"Synchrotron-radiation-induced deposition of boron and boron carbide films from boranes and carboranes: Decaborane" (1991 Boron has been deposited successfully on Si(lll) from the synchrotron-radiation-induced decomposition of decaborane (14), i.e., BloH 14 . The rate of deposition is limited by the adsorption rate of decaborane (14) on the surface. In addition there is some indication that there is an activation barrier to dissociative adsorption. The synchrotron-radiationinduced growth rate of boron thin films from decaborane (14) is linear with coverage for a large range of thickness, suggesting a constant sticking coefficient for decaborane adsorption at room temperature.

Fabrication of boron-carbide/boron heterojunction devices

“…2,3,5-7 Pure boron films also had been deposited on silicon from nidodecaborane (B 10 H 14 ; decaborane͒ by using SR-CVD. 8,9 In an effort to fabricate a more sophisticated device, we made a transistor in our PECVD system. We made a diode directly on an aluminum substrate to demonstrate that a silicon interface is not essential for fabrication of a boron-carbide device.…”

Sputter deposition of high resistivity boron carbide

“…In view of the applicability of boron carbide based semiconductor devices in harsh environments, the microstructure and composition of boron carbide phases have been the subject of much investigation, where bulk single crystals, polycrystalline samples [1][2][3][4][5][6] and thin fi lms [7][8][9][10][11][12][13] have been studied. Recently, we have succeeded in depositing high resistivity material via plasma enhanced chemical vapor deposition (PECVD) [7][8][9], and have fabricated heterojunction diodes and fi eld effect transistors [7,9,[14][15][16].…”

Synchrotron-radiation-induced photodoping using disilane molecular-beam epitaxy: Low-temperature high doping of B

“…3. For more precise argument, the temperature dependence of the decaborane/borane desorption from the substrate surface should be taken into account in the dissociative adsorption rate of decaborane as reported by Perkins et al 13 Below 400°C, Si epitaxial growth can proceed only through photochemical reaction. 5 In this range, however, the growth rate of Si film is reduced to about two orders of magnitude less than the rate at 600°C due to an abrupt decrease in thermal hydrogen desorption from the substrate.…”

“…that SR irradiation induces the dissociation of decaborane. 13 In the reaction system of this work, it was assumed that both the photodissociation of decaborane and photoinduced removal of hydrogen from the B hydride adsorbed on the substrate fundamentally contribute to the enhancement of B incorporation. In the temperature range above 450°C, the B concentration decreases with increasing temperature for both with and without SR irradiation.…”

“…11,12 Doping induced by SR irradiation during GSMBE has not yet been performed; however, area-selective doping through the excitation of adsorbed dopant molecules by SR irradiation has been achieved by Rosenberg et al 11,12 In this work, SR-induced low-temperature doping of B has been performed using disilane molecular-beam epitaxy. Decaborane which has been utilized for the source of B deposition [13][14][15] and doping 11 is also used in this work. Highly B-doped epitaxial film is achieved at very low temperature, less than 100°C, by using SR.…”