Symmetrically strained Si/Ge superlattices on Si substrates

Kasper, E.; Kibbel, H.; Jorke, H.; Brugger, H.; Friess, E.; Abstreiter, G.

doi:10.1103/physrevb.38.3599

Cited by 148 publications

(22 citation statements)

References 12 publications

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“…Even ideally abrupt interfaces may exhibit their own signature in the Raman spectrum. This applies for interfaces between materials without a common atomic element, such as those of Si‐ and Ge layers , or compounds AB and CD, e.g. interfaces of CdSe and BeTe , or of InAs and AlSb .…”

Section: Raman Spectroscopymentioning

confidence: 99%

Raman spectroscopy from buried semiconductor interfaces: Structural and electronic properties

Geurts

2014

Phys. Status Solidi B

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This review focuses on the analysis of buried semiconductor interfaces by Raman spectroscopy, i.e. inelastic light scattering. Simultaneous access to structural and electronic properties can be obtained by employing phonon Raman scattering, induced by deformation potential, or alternatively by the electric-field induced Fröhlich mechanism, as well as Raman scattering from coupled plasmon-LO-phonon modes. Structural information may comprise intermixing, reactivity, strain and interfacial atomic bond sequences. The main electronic properties derived from Raman spectroscopy are the doping levels of the constituent layers, the interfacial electric field strengths and the free-carrier depletion layer widths. Attention is paid also to the possibility of in situ growth monitoring by Raman spectroscopy. Examples of semiconductor interface analysis are presented for heterovalent interfaces between II-VI and III-V semiconductors, especially ZnSe/GaAs(001) and CdTe/ InSb(001), as well as for heavily strained CdTe monolayers, embedded in a BeTe epilayer on GaAs(001).

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Section: Raman Spectroscopymentioning

confidence: 99%

Raman spectroscopy from buried semiconductor interfaces: Structural and electronic properties

Geurts

2014

Phys. Status Solidi B

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“…One possibility is the use of a SimGen superlattice, the average effective Ge content of which is equivalent to that of Sij _ xGex with x = n/(m + n), for the "effective" quantum well channel. We refer to this structure as SUPERlattice-FET, or simply SUPER-FET [78], Previously, high quality, short period superlattices have been fabricated by solid source MBE [79,80]. A unique feature of the superlattice is that carriers are confined to the pure Si and Ge layers, where there is no alloy scattering.…”

Section: Superlattice Field Effect Transistor (Super-fet)mentioning

confidence: 99%

SiGe band engineering for MOS, CMOS and quantum effect devices

Wang

Thomas

Tanner

1995

J Mater Sci: Mater Electron

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In this paper, we review recent progress in SiGe MOS technology. Progress in high mobility p-channel and n-channel devices will be presented as well as some of the materials and processing issues related to the fabrication of these heterostructures. In addition, we will present an outlook on the integration of these devices to complimentary MOS (CMOS) based on Si on Insulator technology (SOl). New directions of novel devices utilizing selective epitaxial growth and the integration of Si/Ge superlattices for enhanced performance in field effect transistors are described. Finally, we will examine some of the materials challenges of integrating SiGe technologies with current CMOS production processes.

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“…Semiconductor superlattices (SLs) are man‐made solids exhibiting novel properties absent in the constituting crystals. The SiGe SLs are interesting from the viewpoint of the integrated optoelectronics, so that they are being currently intensely studied . With the advent of quantum‐size semiconductor structures, the interest to studies of radiation effects in them is rapidly growing .…”

Section: Introductionmentioning

confidence: 99%

Influence of electron irradiation on p-n junctions in SiGe superlattices

Siahlo

Poklonski

Lastovski³

et al. 2014

Phys. Status Solidi B

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The influence of 3–4 MeV electron irradiation on the electrical properties of p–n junctions formed inside Si6Ge4 superlattices (SLs) has been studied. The current–voltage characteristics and capacitance–voltage (C–V) profiles have been measured in the temperature range from 4.2 to 300 K. Negative differential conductance (S‐type current–voltage characteristics) was observed at 77 K after irradiation. The carrier removal rate upon electron irradiation of the SiGe SL does not differ from that of a SiGe alloy with a comparable doping level, which is at variance with the formerly obtained data on a higher radiation hardness of the photoluminescence in similar SLs. We conclude that the radiation hardness is parameter‐specific: making a characteristic of a quantum‐size semiconductor structure more radiation tolerant does not mean the same improvement with respect to other parameters.

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Symmetrically strained Si/Ge superlattices on Si substrates

Cited by 148 publications

References 12 publications

Raman spectroscopy from buried semiconductor interfaces: Structural and electronic properties

Raman spectroscopy from buried semiconductor interfaces: Structural and electronic properties

SiGe band engineering for MOS, CMOS and quantum effect devices

Influence of electron irradiation on p-n junctions in SiGe superlattices

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