Switching Mechanism and the Scalability of Vertical-TFETs

Chen, Fan; Ilatikhameneh, Hesameddin; Tan, Yaohua; Klimeck, Gerhard; Rahman, Rajib

doi:10.1109/ted.2018.2831688

Cited by 33 publications

(9 citation statements)

References 36 publications

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“…The recent observation of superconductivity and insulating behavior in twisted bilayer graphene at the magic angles clearly shows the high degree of tunability of this system [26,27]. Further manipulation of the bilayer response is possible by inserting an insulator between the two graphene layers, out of which tunnel field effect transistors have been realized [9,[28][29][30][31][32].…”

Section: Introductionmentioning

confidence: 99%

Transmission across a bilayer graphene region

2019

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The transmission across a graphene bilayer region is calculated for two different types of connections to monolayer leads. A transfer matrix algorithm based on a tight binding model is developed to obtain the ballistic transmission beyond linear response. The two configurations are found to behave similarly when no gate voltage is applied. For a finite gate voltage, both develop a conductance gap characteristic of a biased bilayer, but only one shows a pronounced conductance step at the gap edge. A gate voltage domain wall applied to the bilayer region renders the conductance of the two configurations similar. For a microstructure consisting of equally spaced domain walls, we find a high sensitivity to the domain size. This is attributed to the presence of topologically protected in-gap states localized at domain walls, which hybridize as the domain size becomes of the order of their confining scale. Our results show that transmission through a bilayer region can be manipulated by a gate voltage in ways not previously anticipated.

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Section: Introductionmentioning

confidence: 99%

Transmission across a bilayer graphene region

2019

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“…Owing to the band-to-band tunneling (BTBT) mechanism, Tunnel field-effect transistors (TFETs) allow further scaling of operation voltages, which makes them the most promising alternatives to the conventional metal oxide semiconductor field-effect transistors (MOSFETs) for low-power applications [ 1 , 2 , 3 , 4 ]. However, the All-silicon TFET suffers from unacceptably low on-state current, which is even lower than the demand reported by the International Technology Roadmap for Semiconductors (ITRS) [ 5 , 6 ], due to the indirect and large bandgap and thus its practical use is retarded.…”

Section: Introductionmentioning

confidence: 99%

Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture

Zhang

et al. 2019

Nanomaterials

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The practical use of tunnel field-effect transistors is retarded by the low on-state current. In this paper, the energy-band engineering of InAs/Si heterojunction and novel device structure of source-pocket concept are combined in a single tunnel field-effect transistor to extensively boost the device performance. The proposed device shows improved tunnel on-state current and subthreshold swing. In addition, analytical potential model for the proposed device is developed and tunneling current is also calculated. Good agreement of the modeled results with numerical simulations verifies the validation of our model. With significantly reduced simulation time while acceptable accuracy, the model would be helpful for the further investigation of TFET-based circuit simulations.

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“…Chen et al. had systematically studied this phenomenon . They held an optimized attitude towards this kind of TFETs in low‐power applications.…”

Section: Emerging Challengesmentioning

confidence: 99%

Recent Advances in Low‐Dimensional Heterojunction‐Based Tunnel Field Effect Transistors

Qin

Wang

et al. 2018

Adv Elect Materials

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Since the continuous scaling down of the transistor channel length, extraordinary improvement is achieved in the switching speed. However, the rising leakage current degrades the power consumption seriously. In this regard, reducing supply voltage might be the most effective method. This requirement can be fulfilled well by tunnel field‐effect transistors (TFETs), because carriers transport via a band‐to‐band tunneling manner in the TFETs. Relying on the special transport mechanism, the TFETs often require band structure modulations and steep interfaces without trap state, which are challenging for bulk materials. Therefore, these challenges have boosted TFET designs based on low‐dimensional materials ranging from Si/Ge nanowires to state‐of‐art van der Waals heterostructures. Here, the key concepts of the currently developed TFETs are studied from the aspects of structure, material, transportation characteristic, and mechanism. According to the heterojunction bonding types, they can be divided into lateral and vertical TFETs in general. Furthermore, other related transistors based on tunneling are also included. Emerging problems and promotion methods toward these TFETs are introduced with the assistance of simulations. The main goal is to introduce the frontiers of TFET explorations and provide readers with a perspective on how to realize TFET applications in the future.

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Switching Mechanism and the Scalability of Vertical-TFETs

Cited by 33 publications

References 36 publications

Transmission across a bilayer graphene region

Transmission across a bilayer graphene region

Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture

Recent Advances in Low‐Dimensional Heterojunction‐Based Tunnel Field Effect Transistors

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