Switching characteristics of a 4H-SiC insulated-gate bipolar transistor with interface defects up to the nonquasi-static regime

Pesic, I.; Navarro, D.; Fujinaga, M.; Furui, Y.; Miura-Mattausch, Mitiko

doi:10.7567/jjap.54.04dp11

Cited by 8 publications

(7 citation statements)

References 30 publications

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“…2,23) The complete description of equations is given in Ref. 22 and summarized here. The defect densities are modeled as Gaussian and exponential distributions with model parameters extracted by fitting the distribution to the measurements.…”

Section: Modeling Of Defect Densities and Device Simulationmentioning

confidence: 99%

“…21) The switching characteristics at high frequency has also been reported. 22) The delay of formation of carriers in the channel dominates more than the carrier trapping=detrapping when the switching speed reaches the nonquasi-static (NQS) regime. While different investigations are reported on the impact of defects, the effect on the device turn-off performance characteristics is not yet addressed.…”

Section: Introductionmentioning

confidence: 99%

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Investigation of 4H-SiC insulated-gate bipolar transistor turn-off performance for achieving low power loss

Navarro¹,

Pesic

Morikawa³

et al. 2016

Jpn. J. Appl. Phys.

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The dynamic characteristics of a 4H-SiC insulated-gate bipolar transistor (IGBT) at pulse switching is investigated by incorporating reported measurements of the interface defect density to device simulation. Different trap features such as energy states and trap time constants are investigated to determine the influence of traps on circuit performance. The capture cross-section parameter used in the simulation depicts the probability of traps to trap/detrap carriers which relates to the carrier trap time constant. It is demonstrated that trapped carriers from the on-state condition cause enhanced generation current during the off-state condition, which give rise to undesired leakage current in addition to the threshold voltage shift previously reported. The device power dissipation is increased by a factor of 100 due to the defects.

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Section: Modeling Of Defect Densities and Device Simulationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Investigation of 4H-SiC insulated-gate bipolar transistor turn-off performance for achieving low power loss

Navarro¹,

Pesic

Morikawa³

et al. 2016

Jpn. J. Appl. Phys.

Self Cite

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show abstract

“…The resulting I c -V c simulated with the measured trap density is shown in Fig.1b [3]. The switching characteristics at high-frequency has also been reported [4]. While different investigations are reported for the impact of defects, the effect on the device turn-off performance characteristics is not addressed.…”

Section: Introductionmentioning

confidence: 99%

Investigation of 4H-SiC IGBT Turn-off Performance for Achieving Low Power Loss

Navarro¹,

Pesic²,

Morikawa³

et al. 2015

Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials

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The dynamic operation of a 4H-SiC IGBT turn-off performance is investigated using reported measurements of the interface defect density and device simulation. During the off-state of a repetitive pulse switching, trapped carriers influence the channel potential towards the collector side that creates a path for current flow. The current is observed as an additional tail current that contributes to power dissipation The capture cross-section parameter used in the simulation depicts the probability of traps capturing carriers. Lower parameter value entails longer time for carrier trap/detrap process, and vice-versa. Future scaled SiC-based devices need to achieve an excellent SiC/SiO 2 interface to achieve low off-state current and thereby, low power loss.

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“…For this reason, the expectation is focused on SiC as a next-generation power semiconductor. Because of a wide band gap of 3.26 eV, SiC-based power semiconductor devices can have advantages in the high voltage insulation strength and the robustness against high temperature [1][2][3]. In addition, SiC-based metal-oxide-semiconductor field-effect transistors (MOSFETs) have potential advantages in their low onresistance and high switching speed [4][5][6].…”

Section: Introductionmentioning

confidence: 99%

Nitriding of 4H-SiC by irradiation of fourth harmonics of Nd:YAG laser pulses in liquid nitrogen

2020

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This study presents surface nitriding of 4H-SiC by the irradiation of the fourth harmonics of Nd:YAG laser pulses in liquid nitrogen. A nitride layer with a depth of 1 μm is formed on the irradiated area. The irradiated area has a bumpy morphology. On the other hand, we also find a nitride layer with a smooth surface morphology in the outside of the irradiated area. The concentration of nitrogen is dependent on the laser fluence, and is 1-5%. The diffusion coefficient of nitrogen, which is deduced from the depth profile of the nitrogen number density, is much greater than the diffusion coefficient in solid SiC, suggesting the transport of nitrogen in melted SiC. Considering the fact that SiC does not have a melted state at the atmospheric pressure, it is revealed by the present work that the melted SiC is realized transiently with the help of the high pressure driven by the laser irradiation.

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Switching characteristics of a 4H-SiC insulated-gate bipolar transistor with interface defects up to the nonquasi-static regime

Cited by 8 publications

References 30 publications

Investigation of 4H-SiC insulated-gate bipolar transistor turn-off performance for achieving low power loss

Investigation of 4H-SiC insulated-gate bipolar transistor turn-off performance for achieving low power loss

Investigation of 4H-SiC IGBT Turn-off Performance for Achieving Low Power Loss

Nitriding of 4H-SiC by irradiation of fourth harmonics of Nd:YAG laser pulses in liquid nitrogen

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