Investigation of 4H-SiC IGBT Turn-off Performance for Achieving Low Power Loss

Abstract

The dynamic operation of a 4H-SiC IGBT turn-off performance is investigated using reported measurements of the interface defect density and device simulation. During the off-state of a repetitive pulse switching, trapped carriers influence the channel potential towards the collector side that creates a path for current flow. The current is observed as an additional tail current that contributes to power dissipation The capture cross-section parameter used in the simulation depicts the probability of traps capturing carriers. Lower parameter value entails longer time for carrier trap/detrap process, and vice-versa. Future scaled SiC-based devices need to achieve an excellent SiC/SiO 2 interface to achieve low off-state current and thereby, low power loss.

Low Turn-Off Loss 4H-SiC Insulated Gate Bipolar Transistor With a Trench Heterojunction Collector

“…In recent years, researchers have conducted extensive research on 4H-SiC insulated gate bipolar transistors (IGBTs) and have achieved great results in both theory and experiment [7][8][9][10]. The breakdown voltage of the device has grown from 6.5 kV to 27 kV [11][12][13][14][15][16][17].…”