Surface States Enhanced Dynamic Schottky Diode Generator with Extremely High Power Density Over 1000 W m⁻²

Abstract

Nowadays, many different kinds of novel generators have been introduced to convert nature power into electrical power, such as mechanical energy, [1,2] hydraulic energy, [3] solar energy, [4,5] thermal energy, [6] etc. These generators all possess an electric field to output power, however, the large

Polarized Water Driven Dynamic PN Junction-Based Direct-Current Generator

“…The highly polarized water molecules can work as conductive dielectric medium, where the distribution of electron density resembles the picture of black holes [ 45 ]. Recent studies about the dynamic metal-semiconductor junction [ 46 – 48 ], semiconductor-semiconductor junction [ 49 – 51 ], and other semiconductor system [ 52 – 61 ] provide an inspiration to explore the electronic dynamics at the dynamic water/semiconductor junction interface [ 62 , 63 ]. In particular, we have proposed the physical phenomenon of the carriers rebounding in the dynamic junction generator with ultrahigh built-in electric field at the semiconductor interface [ 49 – 51 ], which can instantaneously polarize the water molecules in the semiconductor interface.…”

Direct-Current Generator Based on Dynamic PN Junctions with the Designed Voltage Output

“…However, most applications are focused on the static PN structure and there has little exploration on the dynamic PN junction both in information and energy fields (Matyba et al., 2009, Burgener et al., 2011). Recently, high current density direct-current generators have been discovered, which attracts intense attention (Hao et al., 2019, Lin et al., 2019, Lin et al, 2019, Liu et al., 2018a, Liu et al., 2018b, Liu et al., 2019, Shao et al., 2016, Shao et al., 2019a, Shao et al., 2019b). Specifically, we have proposed a physical picture based on the semiconductor physics rather than the triboelectric theory at the interface (Hao et al., 2019, Lin et al., 2019, Lin et al, 2019).…”

“…Recently, high current density direct-current generators have been discovered, which attracts intense attention (Hao et al., 2019, Lin et al., 2019, Lin et al, 2019, Liu et al., 2018a, Liu et al., 2018b, Liu et al., 2019, Shao et al., 2016, Shao et al., 2019a, Shao et al., 2019b). Specifically, we have proposed a physical picture based on the semiconductor physics rather than the triboelectric theory at the interface (Hao et al., 2019, Lin et al., 2019, Lin et al, 2019). To establish a systematic theoretical framework, a dynamic semiconductor/semiconductor structure, especially the “dynamic PN junction” defined by moving one N-type semiconductor over one P-type semiconductor, should be thoroughly explored, which does not involve metal and insulating polymeric material at all.…”

Device Based on Polymer Schottky Junctions and Their Applications: A Review

“…Different from static Schottky junction, the electrons and holes in dynamic Schottky diode do not need to cross over the junction and the carriers can be rebounded back by surface states. Therefore, by increasing the surface states, the current density was further improved to 2.7 × 10 5 A• m -2 because the carriers were accelerated due to the large atomic electric field and the reflecting direction was regulated by the built-in electric field [144]. These Schottky junction-based energy harvesters require no additional rectification circuit and favors the miniaturization and integration of the electronic devices, providing a new route for the self-powered devices and mechanical sensors [123].…”