Device Based on Polymer Schottky Junctions and Their Applications: A Review

Suo, Ying; Ma, Zhong; Zhou, Zhou; Tao, Ruowen; Yan, Keding; Ming, Xin; Li, Yun; Pan, Lijia; Shi, Yi

doi:10.1109/access.2020.3030644

Cited by 12 publications

(7 citation statements)

References 181 publications

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“…Herewith, polymers can be shown to be one of the most susceptible candidates for organic structures interlaid at the M–S interface. They are generally separated from inorganic structures by their commercial availability, controllable electrical and mechanical properties, and ease of fabrication in device electronics and optoelectronics studies. − Moreover, the structural nature of organic polymers allows for significant developments in flexible electronics applications, such as curved imaging and wearable device technologies. − …”

Section: Introductionmentioning

confidence: 99%

Electrical and Photodetector Characteristics of Schottky Structures Interlaid with P(EHA) and P(EHA-co-AA) Functional Polymers by the iCVD Method

Demirezen,

Ulusoy,

Durmuş

et al. 2023

ACS Omega

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In this study, poly(2-ethylhexyl acrylate) (PEHA) homopolymer and its copolymer combined with acrylic acid P(EHA- co -AA) were employed as interfaces in two separate Schottky structures. First, both interfaces were grown by initiated chemical vapor deposition (iCVD), which provides much better deposition control and homogeneous coating compared to solution-phase methods. In addition to this advantageous method, the effects of two different polymers, one of which is better able to adhere to the crystal surface on which it is formed than the other, on the optoelectronic properties have been studied. Then, their current–voltage ( I – V ) and capacitance/conductance–voltage ( C /( G /ω)– V ) characteristics were investigated both in the dark and under illumination. The basic electrical parameters and the illumination-induced profile of the surface state ( N ss ) were probed by I – V and C – V measurements for two samples. A decrease in the barrier height (BH) and, consequently, a significant increase in the photocurrent were observed under illumination. Striking changes in series resistance ( R s ) values are also highlighted. The photocapacitance and conductance characteristics indicated that the structures could be considered not only as photodiodes but also as photocapacitors. Moreover, the voltage-dependent changes of some photodetector parameters, such as responsivity ( R ), sensitivity ( S ), and specific detectivity ( D *), along with the transient photocurrent characteristics, are discussed for both structures. Therefore, we can say that the strong changes in these parameters, which figure the merit of photodiode and photodetector applications, depending on the voltage and under illumination, prove that it is a study carried out in accordance with the purpose and so they can be used in electronic and optoelectronic applications.

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Section: Introductionmentioning

confidence: 99%

Electrical and Photodetector Characteristics of Schottky Structures Interlaid with P(EHA) and P(EHA-co-AA) Functional Polymers by the iCVD Method

Demirezen,

Ulusoy,

Durmuş

et al. 2023

ACS Omega

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“…Among these technologies, DC generators based on Schottky junctions are exceptional because of direct current outputs not requiring rectication, high current density, and simple structures. 13,14 In 2016, our group rst reported the mechanical-toelectrical conversion of conducting polymer-based Schottky diodes. 11 A Schottky diode made of conducting polymers and low work function metals can generate DC power under compression.…”

Section: Introductionmentioning

confidence: 99%

Effect of water and DMSO on mechanoelectrical conversion of Schottky DC generators

et al. 2022

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“…Metal-semiconductor (MS) junctions or Schottky barrier (SB) diodes, which are among the best-known semiconductor-based devices, have found many applications since their discovery and continued to be one of the popular research topics.One of the most interesting aspects of SB devices, which act as both rectifier and ohmic contacts in electronic devices, is that the oxide (MOS) or insulating layers (MIS) between the metalsemiconductor can change the device properties and gain new functional features [2][3][4][5][6][7][8]. Especially in recent years, MPS devices, in which polymer and similar organic materials are used as an insulating layer, have attracted attention due to their production advantages and cost reduction [9][10][11][12][13][14][15].…”

Section: Introductionmentioning

confidence: 99%

Temperature Dependent Current Transport Mechanism of Photopolymer Based Al/NOA60/p-Si MPS Device

Özden

Avcı

Pakma

et al. 2022

J Inorg Organomet Polym

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A photopolymer based Al/NOA60/p-Si (metal-polymer-semiconductor) MPS device was fabricated and the current transport properties were investigated by using the forward bias current-voltage (I-V) characteristic in the temperature range of 80-300 K. The cross-sectional structure of polymer/semiconductor was revealed by the scanning electron microscope (SEM) image and it was seen that the NOA60 photopolymer was tidily coated on the p-Si surface. According to the I-V measurements at room temperature, the MPS device exhibits a good rectification ratio of 8140 at ±1V. Temperature-dependent I-V measurements (I-V-T) were analyzed on the basis of thermionic emission (TE) theory and an abnormal increase in zero-bias barrier height (BH) and a decrease in ideality factor (n) was observed with increasing temperature. Additionally, two different linear regions with distinct values from the theoretical value of the Richardson constant (A*) were observed in the conventional Richardson plot. Such deviations from ideal TE theory has been attributed to the effect of BH inhomogeneities.Gaussian distribution (GD) of BH model has applied the I-V-T results and double GD BH with mean values of 0.75±0.08 eV (80 -140 K) and 1.02±0.11 eV (140 -300 K) were calculated. Moreover, the A* value of 64.73 A/cm 2 K 2 was calculated close to the known value of p-Si from the modified Richardson plot. Thus, it has been concluded that the current transport of the Al/NOA60/p-Si MPS device can be explained by TE with double GD BH model for a wide temperature region.

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Device Based on Polymer Schottky Junctions and Their Applications: A Review

Cited by 12 publications

References 181 publications

Electrical and Photodetector Characteristics of Schottky Structures Interlaid with P(EHA) and P(EHA-co-AA) Functional Polymers by the iCVD Method

Electrical and Photodetector Characteristics of Schottky Structures Interlaid with P(EHA) and P(EHA-co-AA) Functional Polymers by the iCVD Method

Effect of water and DMSO on mechanoelectrical conversion of Schottky DC generators

Temperature Dependent Current Transport Mechanism of Photopolymer Based Al/NOA60/p-Si MPS Device

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