There is a rising prospective in harvesting energy from the environment, as in situ energy is required for the distributed sensors in the interconnected information society, among which the water flow energy is the most potential candidate as a clean and abundant mechanical source. However, for microscale and unordered movement of water, achieving a sustainable direct-current generating device with high output to drive the load element is still challenging, which requires for further exploration. Herein, we propose a dynamic PN water junction generator with moving water sandwiched between two semiconductors, which outputs a sustainable direct-current voltage of 0.3 V and a current of 0.64 μA. The mechanism can be attributed to the dynamic polarization process of water as moving dielectric medium in the dynamic PN water junction, under the Fermi level difference of two semiconductors. We further demonstrate an encapsulated portable power-generating device with simple structure and continuous direct-current voltage output of 0.11 V, which exhibits its promising potential application in the field of wearable devices and the IoTs.
Liquid electricity generator and hydrovoltaic technology have received numerous attentions, which can be divided into horizontal movement generator and vertical movement generator. The horizontal movement generator is limited for powering the integrated and miniaturized energy chip as the current output direction is depending
In situ energy supply method has a high demand for the various distributed devices in the fast‐developing Internet of Things. Harvesting energy from the environment that converts mechanical energy into electricity has emerged as a promising candidate for in situ energy network. However, although hardly achieved, electricity is much more desired under low temperature environments, such as the north pole or on Mars. Here, it is reported that the dynamic Schottky diode can work well under a low temperature of 77 K, while the electricity output can be greatly increased compared with that at room temperature. The voltage and current output can be increased to 1.21 V and 11.38 µA compared to 0.76 V and 4.86 µA at room temperature, the higher carrier mobility at a lower temperature is responsible for this improvement. This research passes the way for power generation in some extreme cold areas, which can further promote the practical application of dynamic diode generators.
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