Surface science issues in plasma etching

Oehrlein, G. S.; Doemling, M. F.; Kastenmeier, B. E. E.; Matsuo, P. J.; Rueger, Neal R.; Schaepkens, M.; Standaert, T. E. F. M.

doi:10.1147/rd.431.0181

Cited by 43 publications

(32 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Above some threshold, the etch rate for all plasma chemistries presented increases linearly with ffiffiffi ffi E p , E th being $80 eV for both Ar/IBr and Ar/BI 3 . These results clearly indicate that etching is driven by the same ion-assisted mechanism over the whole range of ion energies investigated [53]. According to Eqs.…”

Section: Resultssupporting

confidence: 62%

Dry etching of zinc-oxide and indium-zinc-oxide in IBr and BI3 plasma chemistries

Lim

Stafford

Song

et al. 2007

Applied Surface Science

View full text Add to dashboard Cite

Section: Resultssupporting

confidence: 62%

Dry etching of zinc-oxide and indium-zinc-oxide in IBr and BI3 plasma chemistries

Lim

Stafford

Song

et al. 2007

Applied Surface Science

View full text Add to dashboard Cite

“…The fluorocarbon film on the nitride surface is relatively thicker than on the oxide surface. Because the etching rate of the substrate is inversely proportional to the thickness of the fluorocarbon film which prevents etchants from reaching the substrate, this chemical difference between Si 3 N 4 and SiO 2 substrate allows for a window of selective etching [16,38]. …”

Section: Article In Pressmentioning

confidence: 99%

Atomic scale simulation of physical sputtering of silicon oxide and silicon nitride thin films

Kim

Lee

Lee³

et al. 2006

Journal of Crystal Growth

View full text Add to dashboard Cite

“…An electron-free space-charge region designated as a "sheath" forms between a plasma and a contacting solid surface. Sheaths [2], [6] a sheath. Most of the ion energy is provided by acceleration in the sheath E-fields established by self-biasing the wafer chuck.…”

mentioning

confidence: 99%

Ion-Shading Effects During Metal Etch in Plasma Processing

Madziwa-Nussinov

Arnush

Chen

2007

IEEE Trans. Plasma Sci.

View full text Add to dashboard Cite

Abstract-Self-consistent computations of electric fields (E-fields) and ion orbits inside trenches were done in order to verify Hashimoto's hypothesis of damage that is induced during plasma processing. In his well-accepted theory, Hashimoto proposed a mechanism for electron-shading damage, whereby the photoresist at the tops of trenches and vias collects a negative charge from the thermal electrons, creating an E-field, which prevents electrons from reaching the trench bottom, where collector is located. The sheath E-field accelerates the ions and drives them straight into the trench where they impinge on the collector, and charge it positive if it is isolated. In the computations presented in this paper, it is shown that ion orbits depend only on the E-fields at the entrance and are sensitive to changes in the shape of the photoresist layer there. In addition to the electronshading mechanism, there is an "ion-shading" effect that protects part of the trench walls, and the number of ions that strike the wall is too small to cause any deformation of the walls.

show abstract

Surface science issues in plasma etching

Cited by 43 publications

References 4 publications

Dry etching of zinc-oxide and indium-zinc-oxide in IBr and BI3 plasma chemistries

Dry etching of zinc-oxide and indium-zinc-oxide in IBr and BI3 plasma chemistries

Atomic scale simulation of physical sputtering of silicon oxide and silicon nitride thin films

Ion-Shading Effects During Metal Etch in Plasma Processing

Contact Info

Product

Resources

About