The authors report on transparent thin-film transistors using amorphous indium zinc oxides for an active channel layer and gate-source-drain electrodes fabricated by rf magnetron sputtering at room temperature. The conducting properties of the amorphous indium zinc oxides were controlled by oxygen partial pressures in the sputtering ambient. An amorphous AlOx served as the gate dielectric oxide. Devices were realized that display a threshold voltage of 1.1V and an on/off ratio of ∼106 operated as a n-type enhancement mode with saturation mobility of 0.53cm2∕Vs. The devices showed optical transmittance about 80% in the visible range.
Radio-frequency superimposed direct current magnetron sputtered Ga:ZnO transparent conducting thin films J. Appl. Phys. 111, 093718 (2012); 10.1063/1.4709753 Properties of Co-deposited indium tin oxide and zinc oxide films using a bipolar pulse power supply and a dual magnetron sputter source J. Vac. Sci. Technol. A 21, 1399 (2003); 10.1116/1.1575225 Effect of hydrogen partial pressure on optoelectronic properties of indium tin oxide thin films deposited by radio frequency magnetron sputtering method J. Appl. Phys. 86, 974 (1999); 10.1063/1.370834Transparent and conductive multicomponent oxide films prepared by magnetron sputtering Indium-zinc oxide ͑IZO͒ films were grown on glass substrates by rf magnetron sputtering using targets of 50 mol % In 2 O 3 -50 mol % In 2 O 3 ͑ZnO͒ 3 and In 2 Zn k O k+3 ͑k =3, 4, 5, and 7͒ at room temperature and 300°C. The difference in Zn content between the films and the sputter targets varied with the growth temperature. The structural, electrical, and optical properties of the IZO films were investigated as a function of Zn content. The crystal structure of IZO films grown at room temperature changed from amorphous to crystalline at a Zn content ͑Zn/ ͑Zn+ In͒͒ of 68 at. %. IZO films grown at 300°C using a target of 50% In 2 O 3 -50% In 2 O 3 ͑ZnO͒ 3 had a Zn content of 40 at. % and its x-ray diffraction peaks were matched with those of ITO. As the Zn content in IZO thin films grown at 300°C increased from 40 to 74 at. %, the conductivity and optical band gap energy decreased.
Structural and optical properties of zinc oxide film using RF-sputtering technique AIP Conf. Proc. 1502, 538 (2012); 10.1063/1.4769172Effects of Zn content on structural and transparent conducting properties of indium-zinc oxide films grown by rf magnetron sputtering Zinc oxide-based transparent conductive oxide films prepared by pulsed magnetron sputtering from powder targets: Process features and film properties Properties of indium zinc oxide thin films on heat withstanding plastic substrateThe etching characteristics of indium zinc oxide ͑IZO͒ films were investigated using a high-density plasma in Ar, Ar/ Cl 2 , and Ar/ CH 4 /H 2 chemistries. The IZO layers were deposited by means of rf magnetron sputtering, in which the target composition and growth temperature were varied to selectively tune the film properties. X-ray diffraction, elastic recoil detection, and Rutherford backscattering spectroscopy were used to determine the crystallization quality, atomic density, and composition of the as-deposited IZO films. As the In/ ͑In+ Zn͒ composition ratio in the IZO layer increases, the etch yield in Ar and Ar/ Cl 2 plasmas remains fairly constant, indicating that the etching dynamic is essentially independent of the film properties. In sharp contrast, a strong increase of the IZO etch yield with the In/ ͑In+ Zn͒ fraction is observed in Ar/ CH 4 /H 2 plasma due to the preferential desorption of the group-III etch products. By comparing these experimental data to the predictions of a simple rate model accounting for preferential desorption effects, it is concluded that the balance between etching and polymer deposition in the Ar/ CH 4 /H 2 plasma plays an important role in the evolution of the IZO etch rate with the In concentration fraction.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations –citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.