Transparent amorphous indium zinc oxide thin-film transistors fabricated at room temperature

Abstract

The authors report on transparent thin-film transistors using amorphous indium zinc oxides for an active channel layer and gate-source-drain electrodes fabricated by rf magnetron sputtering at room temperature. The conducting properties of the amorphous indium zinc oxides were controlled by oxygen partial pressures in the sputtering ambient. An amorphous AlOx served as the gate dielectric oxide. Devices were realized that display a threshold voltage of 1.1V and an on/off ratio of ∼106 operated as a n-type enhancement mode with saturation mobility of 0.53cm2∕Vs. The devices showed optical transmittance about 80% in the visible range.

Flexible a-IZO thin film transistors fabricated by solution processes

“…Among these AOSs, the amorphous indium zinc oxide (a-IZO) is a good candidate for flexible TFTs and flexible electronic circuit applications. A-IZO exhibits a wide optical band gap (3.7 eV), high mobility (<60 cm 2 /V s), and resistivity between 10 −4 and 10 1 cm [9,10]. Several reports demonstrated that a-IZO films permit controllable conductivity and are appropriate for use as the active layers and source/drain electrodes in transparent TFTs [9][10][11][12].…”

“…Most a-IZO films and a-IZO TFTs are prepared on glass substrates [9][10][11][12] or silicon wafer [13,14] using physical vapor deposition (PVD) techniques such as RF magnetron sputtering and pulsed laser deposition. These require expensive equipment and result in high manufacturing costs.…”

Exploration on chemical mechanical planarization of ZnO functional thin films for novel devices

“…In recent years, ZnO thin films has attracted widely attention for a variety of optoelectronics and microelectronics applications [1][2][3][4][5][6][7][8], it can be widely used in transparent thin films transistors (TFTs), resistive random access memory (RRAM) devices [9], surface acoustic wave device and other fields. To accommodate the improvements such as decreased feature size, increased device speed and more intricate designs, each layer in the devices must be flatted.…”

Preparation of Sn doped SiO₂ films using SiO₂ and SnO₂ mixture powder target by magnetron sputtering deposition

“…Physical vapor deposition (PVD) is a common film deposition method, and its deposition mechanisms have been thoroughly studied [1][2][3][4]. In particular, sputtering deposition and pulsed laser deposition (PLD) have become widely used techniques for the deposition of thin films because of the advantages of a simple system setup, wide range of deposition conditions, wider choice of materials and higher instantaneous deposition rates.…”