Flexible a-IZO thin film transistors fabricated by solution processes

Synthesis and characterization of sol–gel derived gallium-doped zinc oxide thin films

“…Among the varieties of films, zinc oxide (ZnO) based transparent conducting/semiconducting thin films are attracting great attention because they are promising candidates for transparent and flexible electronics [4,5]. Polycrystalline ZnO-based semiconductor thin films have higher carrier mobility, greater chemical stability, and lower photosensitivity levels than conventional hydrogenated amorphous silicon (a-Si:H) thin films.…”

Letter : Solution-processed flexible zinc-tin oxide thin-film transistors on ultra-thin polyimide substrates

“…On the other hand, most of the oxide semiconductors include indium . But the low natural abundance of indium has made it into an increasingly expensive commodity, which has led to a large research driven to replace indium in oxide semiconductors.…”

“…On the other hand, most of the oxide semiconductors include indium. [8][9][10][11] But the low natural abundance of indium has made it into an increasingly expensive commodity, which has led to a large research driven to replace indium in oxide semiconductors. For example, zinc-tin oxide (ZTO) is a particularly attractive material as indium-free active layer material because of the high intrinsic mobility and wide bandgap of SnO 2 .…”

Preparation and characterization of Al 2x In 2−2x O 3 films deposited on MgO (1 0 0) by MOCVD

“…Recently wide-band gap semiconductors have attracted much attention recently due to their potential applications in ultraviolet light emitters and detectors, solar cells and thin film transistors [1][2][3]. Semiconductors with wide band gap such as ZnO [4,5], In 2 O 3 [6,7], SnO 2 [8], Al x Ga 1Àx N [9,10], and Mg x Zn 1Àx O [11,12] have been extensively investigated as the alternative building units for UV detectors.…”